Over the course of the project, the SPEAR Consortium has made substantial progress in establishing Spin Orbitronics as a key enabling technology for future European nanoelectronics. By combining experimental and theoretical expertise, SPEAR has delivered major advances in materials discovery, device physics, and technological applications based on SOC.
At the device level, SPEAR demonstrated proof-of-concept implementations of SOT-MRAM, spin–orbit ferroelectric (SoFRAM) and in-memory computing architectures, as well as spin Hall nano-oscillators (SHNOs) with memristive control and mutual synchronization for neuromorphic and reservoir computing. Key process innovations were achieved for CMOS-compatible fabrication, including optimized SOT-MRAMs by using Pt/Cu hybrid SOT layers in combination with synthetic aniferromagnets as free layers in the MTJ, leading to improved thermal stability and energy efficiency, and advanced pulse-shaping techniques that reduce switching energy by up to 50%. The improvement of novel metrology tools, such as high-resolution NV magnetometry and advanced tight-binding modelling of spin and orbital transport, further expanded our capability in spintronic device design and characterization.
The project results were disseminated by ESRs in a total of 64 contributions to international conferences (DPG Spring Meeting, Joint European Magnetic Symposia, Intermag, IEEE International Electron Devices Meeting, International Conference on Magnetism, among others), and 49 more have been made to smaller events. Additionally, SPEAR has generated 28 peer-reviewed publications, all of which are available via open access repositories, with around 20 more publications expected in the following months.
Regarding exploitation, four project-related patents have been submitted and three more are under preparation. In terms of other, non-commercial results, SPEAR has generated knowledge that will contribute to the development of scalable spin-based device concepts, the emulation of neuromorphic computing capabilities using proven SOT-MRAM technology, theoretical material design based on aspects of the band structure and the corresponding geometrical properties, the general improvement of NV magnetometry, and reservoir computing based on spin-Hall nano-oscillators.