Periodic Reporting for period 2 - SPEAR (Spin-orbit materials, emergent phenomena and related technology training)
Periodo di rendicontazione: 2023-03-01 al 2025-08-31
The Nanoelectronics Roadmap for Europe, released in December 2018, identifies promising novel technologies to be developed on the medium and long term for the European nanoelectronics industry, among which magnetic random-access memory (MRAM) is highlighted as a future memory technology. Indeed, the largest electronics companies such as Samsung, TSMC and Intel have started large scale production of spin transfer torque (STT)-MRAM. The Roadmap also identifies spintronics as one of the best strategies to complement and go beyond current CMOS technology. Spintronics was born in Europe, led by the 2007 Nobel laureates Profs. A. Fert and P. Grünberg. Although the spintronics academic community is strong, the number of European companies taking advantage of spintronic technologies is still limited relative to the number companies in the US and Asia.
The SPEAR network has combined the excellence of the European spintronics community with strong participation of the private sector. New ground-breaking scientific and technological objectives have been targeted in the emerging field of Spin Orbitronics--the use of spin-orbit coupling (SOC) in spintronics--with a special emphasis on the physics of spin-orbit torques (SOTs), spin-to-charge conversion (SCC), 2D magnetic materials, spin Hall nano-oscillators (SHNOs), voltage control of magnetic anisotropy (VCMA) and skyrmions. Our project has devekoped state-of-the-art technologies and materials, including device nanofabrication, high-resolution microscopies, and theoretical calculations.
Over its lifetime, the has consortium achieved major scientific breakthroughs across materials, devices, and theoretical understanding, among which we may highlight novel two-dimensional and oxide-based heterostructures with large spin–orbit coupling were developed; emergent magnetic and topological phenomena—such as gate-tunable exchange bias, topological orbital magnetization, and spin–orbit torque control—were uncovered; and prototype spin–orbit-based devices, including SOT-MRAM, SHNOs for neuromorphic computing, and spin–orbit ferroelectric memories (SoFRAM), were demonstrated. These results not only deepen our fundamental understanding of spin–orbit interactions but also provide tangible pathways toward low-power, CMOS-compatible spintronic technologies. Beyond its scientific impact, SPEAR has built a durable European network connecting academia and industry, and trained highly skilled researchers who will drive future innovation in nanoelectronics and quantum technologies.
The SPEAR network has combined the excellence of the European spintronics community with strong participation of the private sector. New ground-breaking scientific and technological objectives have been targeted in the emerging field of Spin Orbitronics--the use of spin-orbit coupling (SOC) in spintronics--with a special emphasis on the physics of spin-orbit torques (SOTs), spin-to-charge conversion (SCC), 2D magnetic materials, spin Hall nano-oscillators (SHNOs), voltage control of magnetic anisotropy (VCMA) and skyrmions. Our project has devekoped state-of-the-art technologies and materials, including device nanofabrication, high-resolution microscopies, and theoretical calculations.
Over its lifetime, the has consortium achieved major scientific breakthroughs across materials, devices, and theoretical understanding, among which we may highlight novel two-dimensional and oxide-based heterostructures with large spin–orbit coupling were developed; emergent magnetic and topological phenomena—such as gate-tunable exchange bias, topological orbital magnetization, and spin–orbit torque control—were uncovered; and prototype spin–orbit-based devices, including SOT-MRAM, SHNOs for neuromorphic computing, and spin–orbit ferroelectric memories (SoFRAM), were demonstrated. These results not only deepen our fundamental understanding of spin–orbit interactions but also provide tangible pathways toward low-power, CMOS-compatible spintronic technologies. Beyond its scientific impact, SPEAR has built a durable European network connecting academia and industry, and trained highly skilled researchers who will drive future innovation in nanoelectronics and quantum technologies.
Over the course of the project, the SPEAR Consortium has made substantial progress in establishing Spin Orbitronics as a key enabling technology for future European nanoelectronics. By combining experimental and theoretical expertise, SPEAR has delivered major advances in materials discovery, device physics, and technological applications based on SOC.
At the device level, SPEAR demonstrated proof-of-concept implementations of SOT-MRAM, spin–orbit ferroelectric (SoFRAM) and in-memory computing architectures, as well as spin Hall nano-oscillators (SHNOs) with memristive control and mutual synchronization for neuromorphic and reservoir computing. Key process innovations were achieved for CMOS-compatible fabrication, including optimized SOT-MRAMs by using Pt/Cu hybrid SOT layers in combination with synthetic aniferromagnets as free layers in the MTJ, leading to improved thermal stability and energy efficiency, and advanced pulse-shaping techniques that reduce switching energy by up to 50%. The improvement of novel metrology tools, such as high-resolution NV magnetometry and advanced tight-binding modelling of spin and orbital transport, further expanded our capability in spintronic device design and characterization.
The project results were disseminated by ESRs in a total of 64 contributions to international conferences (DPG Spring Meeting, Joint European Magnetic Symposia, Intermag, IEEE International Electron Devices Meeting, International Conference on Magnetism, among others), and 49 more have been made to smaller events. Additionally, SPEAR has generated 28 peer-reviewed publications, all of which are available via open access repositories, with around 20 more publications expected in the following months.
Regarding exploitation, four project-related patents have been submitted and three more are under preparation. In terms of other, non-commercial results, SPEAR has generated knowledge that will contribute to the development of scalable spin-based device concepts, the emulation of neuromorphic computing capabilities using proven SOT-MRAM technology, theoretical material design based on aspects of the band structure and the corresponding geometrical properties, the general improvement of NV magnetometry, and reservoir computing based on spin-Hall nano-oscillators.
At the device level, SPEAR demonstrated proof-of-concept implementations of SOT-MRAM, spin–orbit ferroelectric (SoFRAM) and in-memory computing architectures, as well as spin Hall nano-oscillators (SHNOs) with memristive control and mutual synchronization for neuromorphic and reservoir computing. Key process innovations were achieved for CMOS-compatible fabrication, including optimized SOT-MRAMs by using Pt/Cu hybrid SOT layers in combination with synthetic aniferromagnets as free layers in the MTJ, leading to improved thermal stability and energy efficiency, and advanced pulse-shaping techniques that reduce switching energy by up to 50%. The improvement of novel metrology tools, such as high-resolution NV magnetometry and advanced tight-binding modelling of spin and orbital transport, further expanded our capability in spintronic device design and characterization.
The project results were disseminated by ESRs in a total of 64 contributions to international conferences (DPG Spring Meeting, Joint European Magnetic Symposia, Intermag, IEEE International Electron Devices Meeting, International Conference on Magnetism, among others), and 49 more have been made to smaller events. Additionally, SPEAR has generated 28 peer-reviewed publications, all of which are available via open access repositories, with around 20 more publications expected in the following months.
Regarding exploitation, four project-related patents have been submitted and three more are under preparation. In terms of other, non-commercial results, SPEAR has generated knowledge that will contribute to the development of scalable spin-based device concepts, the emulation of neuromorphic computing capabilities using proven SOT-MRAM technology, theoretical material design based on aspects of the band structure and the corresponding geometrical properties, the general improvement of NV magnetometry, and reservoir computing based on spin-Hall nano-oscillators.
The SPEAR project has pushed the boundaries of Spin Orbitronics well beyond the current state of the art by integrating material discovery, theoretical modelling, and device demonstration in a unified European research and training framework. The consortium achieved significant progress in understanding and exploiting SOC phenomena at interfaces and in low-dimensional materials, leading to novel spin–charge interconversion mechanisms, gate-tunable magnetism, and topological orbital magnetization.
The project generated several proof-of-concept devices demonstrating beyond-state-of-the-art functionalities: SOT-MRAM elements with improved endurance and reduced error rates; SoFRAM architectures combining non-volatility with energy efficiency; and SHNOs capable of synchronization and memristive control for unconventional computing paradigms. A major outcome is the demonstration that SOC phenomena can be harnessed to achieve CMOS-compatible, low-power memory and computing solutions, supporting the transition toward neuromorphic and in-memory computing.
The strong exploitation potential of the results is evidenced by four patents submitted and three under preparation. The active participation of early-stage researchers in patent preparation provided them with valuable experience in research valorization. A start-up company has been launched at CEA to develop ferroelectric spin–orbit technologies, and a new industrial partnership between Spintec-CEA and Leti was created to accelerate the transition from laboratory prototypes to market-oriented devices. These initiatives demonstrate SPEAR’s role as a catalyst for innovation in the European spintronics ecosystem.
The socio-economic and societal impacts of SPEAR are manifold. The project has trained fourteen highly skilled PhD researchers in a field of strategic importance for Europe’s digital sovereignty, ensuring a new generation of scientists ready to contribute to industry and academia. It has enhanced European competitiveness in emerging memory and computing technologies, where control over energy efficiency and data security are key. Dissemination and outreach activities have raised public awareness of nanoelectronics and inspired interest in STEM among young students.
Overall, SPEAR has delivered cutting-edge scientific and technological results, established new industrial and academic collaborations, and laid the foundations for a sustainable European innovation pipeline in Spin Orbitronics, with long-term benefits for the electronics industry, research community, and society at large.
The project generated several proof-of-concept devices demonstrating beyond-state-of-the-art functionalities: SOT-MRAM elements with improved endurance and reduced error rates; SoFRAM architectures combining non-volatility with energy efficiency; and SHNOs capable of synchronization and memristive control for unconventional computing paradigms. A major outcome is the demonstration that SOC phenomena can be harnessed to achieve CMOS-compatible, low-power memory and computing solutions, supporting the transition toward neuromorphic and in-memory computing.
The strong exploitation potential of the results is evidenced by four patents submitted and three under preparation. The active participation of early-stage researchers in patent preparation provided them with valuable experience in research valorization. A start-up company has been launched at CEA to develop ferroelectric spin–orbit technologies, and a new industrial partnership between Spintec-CEA and Leti was created to accelerate the transition from laboratory prototypes to market-oriented devices. These initiatives demonstrate SPEAR’s role as a catalyst for innovation in the European spintronics ecosystem.
The socio-economic and societal impacts of SPEAR are manifold. The project has trained fourteen highly skilled PhD researchers in a field of strategic importance for Europe’s digital sovereignty, ensuring a new generation of scientists ready to contribute to industry and academia. It has enhanced European competitiveness in emerging memory and computing technologies, where control over energy efficiency and data security are key. Dissemination and outreach activities have raised public awareness of nanoelectronics and inspired interest in STEM among young students.
Overall, SPEAR has delivered cutting-edge scientific and technological results, established new industrial and academic collaborations, and laid the foundations for a sustainable European innovation pipeline in Spin Orbitronics, with long-term benefits for the electronics industry, research community, and society at large.