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Developing optoelectronics in two-dimensional semiconductors

Periodic Reporting for period 2 - 2Exciting (Developing optoelectronics in two-dimensional semiconductors)

Période du rapport: 2023-01-01 au 2024-12-31

Strain tunable differential reflectance in monolayer MoS2
An FET device with double gate based on hBN and novel dielectric LaOBr.
Experimental setup for strain engineering experiments
2Exciting Project Logo
vdW HS prepared and measured by our ESRs
(a) Lateral HS excitonic device and (b) PL signature of interfacial exciton
Superlattice effects in relaxed twisted bilayer MoS2
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