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Developing optoelectronics in two-dimensional semiconductors

Periodic Reporting for period 2 - 2Exciting (Developing optoelectronics in two-dimensional semiconductors)

Berichtszeitraum: 2023-01-01 bis 2024-12-31

Strain tunable differential reflectance in monolayer MoS2
An FET device with double gate based on hBN and novel dielectric LaOBr.
Experimental setup for strain engineering experiments
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vdW HS prepared and measured by our ESRs
(a) Lateral HS excitonic device and (b) PL signature of interfacial exciton
Superlattice effects in relaxed twisted bilayer MoS2
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