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Due to their intrinsic properties, vertical cavity surface emitting lasers (VCSEL) have a wide variety of potential use and represent the new generation of laser sources for telecommunication or data communication. The project concerns a long wavelength (LW) VCSELs operating continuous wave (CW) at room temperature, through the optimization of electrical, optical and thermal properties of the structure and to test them in a system. The intrinsic properties of VCSELs lead to specific characteristics of these devices. The volume of the active layer is around 10 times lower than in edge-emitting lasers. A reduction in the power consumption is expected as well as the possibility of operation over a wide range of temperature. The output beam has intrinsically low and circular divergence. In consequence, efficient coupling and simplified pig-tailing will contribute to the increase of positioning tolerances.
Results concerning the mirror are as follows: wafer fusion demonstrated with low voltage drop at the semiconductor interface; design and first experimental assessment of structured mirrors for the polarization control of the optical beam. With respect to VCSELs design and fabrication the following has been achieved: high performance semiconductor strained compensated quantum wells (QW) demonstrated for both 1.3 and 1.5 um active layers; fully operational modelling tools available for calculation of electrical, optical and thermal VCSELs properties; basic processing steps demonstrated; fabrication of a shallow mesa structure including two different mirrors; pulsed operation up to +50 C, a minimum threshold current less than 10 mA at -50 C and an output power of 100 uW are the main features of the components. CW operation is observed up to -20 C; fabrication of undercut ridge structure including two dielectric mirrors; the devices operate in pulsed regime at room temperature with threshold current less than 10 mA, a single mode operation and 100 (W output power; CW operation up to -15 C.
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