Objective Epichem have been successful in identifying the optimum precursors for MOVPE of SiC layers and establish production methods capable of yielding ultra high purity batches of these materials. Furthermore analytical sensitivities for key impurities have been improved. Supply of source material to growth teams has been maintained throughout the project.Data on the resistivity and piezoresisitive effect of high quality SiCOIN films has been successfully collected. Extensive characterization of SiCOIN films by HALL measurements was done. Two sensor concepts were developed: a high-pressure sensor (up to P = 2000 bar) for oil well logging applications and a low-pressure sensor (up to P = 12 bar) for turbine control or avionics applications. Both concepts were optimised by FE analyses. Sensors of both types were successfully fabricated and special 3C-SiC deposition techniques (selective deposition, deposition on structured substrates) were developed.In the proposed project a material system consisting of a single crystalline B SiC layer deposited by CVD on an SOI (Silicon On Insulator) substrate will be developed for the fabrication of various high temperature sensor devices. For the deposition and doping of the SiC layers special low temperature (T<1000 C) precursors will be developed, to obtain the lowest possible deposition temperatures. The advantage of the SiC on SOI system is that the SiC layer is electrically insulated from the Si substrate by a thin oxide layer since the thin Si overlayer of the SOI substrates converts during a carbonization step into single crystalline SiC. However, the bulk micromachining capabilities of the Si substrate, necessary for the fabrication of sensor devices, will remain unchanged. To determine the quality of the layers and to optimize the process extensive analysis (e.g. XRD, TEM, AFM, and optical and electrical characterization) will be performed. To demonstrate the applicability of this material system (SiC On INsulatoroSiCOIN) for sensors, a number of sensors such as pressure, vibration and position sensors will be developed that will be tested by the industrial partners under real industrial conditions such as in automotive or oil well logging applications. The processes necessary for the technological realization of the sensors (CVD of in situ doped, B SiC layers on pure Si substrates, oxidation, dry etching, ion implantation and metallization) have been developed within the former BRITE/EURAM basic research programme TECSICA (Technology and Characterisation of Silicon Carbide films for high temperature Applications). Fields of science natural scienceschemical sciencesinorganic chemistryinorganic compoundsnatural scienceschemical scienceselectrochemistryelectrolysisengineering and technologyelectrical engineering, electronic engineering, information engineeringelectronic engineeringsensorsnatural scienceschemical sciencesinorganic chemistrymetalloids Programme(s) FP4-BRITE/EURAM 3 - Specific research and technological development programme in the field of industrial and materials technologies, 1994-1998 Topic(s) 0201 - Materials engineering Call for proposal Data not available Funding Scheme CSC - Cost-sharing contracts Coordinator N/A Address 81663 München Germany See on map EU contribution € 0,00 Participants (6) Sort alphabetically Sort by EU Contribution Expand all Collapse all ARISTOTLE UNIVERSITY OF THESSALONIKI Greece EU contribution € 0,00 Address University campus 54006 Thessaloniki See on map Epichem Ltd United Kingdom EU contribution € 0,00 Address Power road bromborough L62 3QF Wirral See on map Links Website Opens in new window SCHLUMBERGER ETUDES ET PRODUCTIONS SA France EU contribution € 0,00 Address 26,rue st dominique 75007 Paris See on map Sextant Avionique SA France EU contribution € 0,00 Address 25,rue jules védrines 25 26027 Valence See on map TECHNISCHE UNIVERSITAET BERLIN* Germany EU contribution € 0,00 Address 25,gustav-meyer-allee 25 13355 Berlin See on map UNIVERSITE DE MONTPELLIER II - SCIENCES ET TECHNIQUES DU LANGUEDOC France EU contribution € 0,00 Address Place eugène bataillon 34095 Montpellier See on map
