CORDIS provides links to public deliverables and publications of HORIZON projects.
Links to deliverables and publications from FP7 projects, as well as links to some specific result types such as dataset and software, are dynamically retrieved from OpenAIRE .
Deliverables
Development of new precursor system and related characterization techniques:
Although MeSiH(3) has been the focus of developmental work a number of alternative precursors for the reduced temperature deposition of SiC on insulator were investigated. Production techniques to afford high quality batches of both MeSiH(3) and the highest potential alternative source HMDS have been identified and proved reproducible and scaleable. Monitoring of their quality was performed using analytical techniques also developed on the project to ensure the highest specification products were supplied. Production of these new precursors may now proceed on a commercial basis to allow the fabrication of state of the art devices using MOVPE.
Data base of SiCOIN material properties:
The knowledge of material properties is essential for the development of new sensor concepts. With the gained data, the performance of new sensors can be precisely predicted. Cost and time for the development of further sensors is reduced. The data can be used as a basis for theoretical models of material structure and properties. Theoretical work is useful in order to indicate the potential of further material improvement.
Established fabrication technology for high temperature pressure sensors:
Different, new fabrication technologies have been developed together with the partners. The deposition of 3C-SiC on structured substrates with closed cavities (for absolute pressure sensors with a built-in reference pressure) was developed and demonstrated. No connection of the sensor chip to a reference pressure line is needed. This facilitates packaging, increases the high temperature stability of a packaged sensor and reduces the cost of packaging. The selective deposition of 3C-SiC was developed together with the partners. Selective deposition facilitates sensor fabrication as mesa-etching of deposited 3C-SiC is not necessary any more. The sensor performance is improved as a reliable vertical insulation of the deposited resistors from the substrate can be ensured.
The transfer of the silicon over-layer (SOL) from a UNIBOND SOI wafer to a new substrate wafer by silicon fusion bonding was realized. This gives the freedom to create modified material systems, for example systems with an intermediate silicon nitride layer. It was possible to demonstrate that such a layer stabilizes the whole material system during 3C-SiC deposition. The realization of higher quality SiCOIN films based on new substrates seems feasible in the near future.
Evaluation of fabricated SiCOIN sensor demonstrators / demonstration of feasibility:
The characterization and evaluation of fabricated SiCOIN sensor demonstrators showed the principal feasibility of SiCOIN based high temperature pressure sensors. The enhancement of the deposition capabilities to larger (4 inch) substrates would allow higher volume production of sensors for a wide field of high temperature applications.
The annealing by xenon flash lamps for a short period of 20ms increases the temperature in the 3C-SiC film several hundreds degrees above the melting point of silicon. Flash lamp irradiation into 3C-SiC/Si is a combination of high temperature annealing at the uppermost part of the 3C-SiC and a liquid phase epitaxy (LPE) at the lower part of the 3C-SiC film, according to the following mechanism.
-The energy due to flash lamp irradiation is mainly absorbed at the SiC/Si interface.
-The Si near the interface is melted. The process is adiabatic resulting in a significant increase of the temperature at the interface, well above the melting point of Si.
-The melted silicon dissolves part of the 3C-SiC film, which is in contact.
-The remaining in solid phase 3C-SiC at the uppermost part of the film is annealed at a temperature above the melting point of Si and part of the existing defects in the 3C-SiC are annihilated.
-During solidification phase separation occurs and the dissolved in the silicon SiC is epitaxially deposited on the already annealed uppermost 3C-SiC film, which acts as a seed. Due to stress the film was buckled in macroscopic scale, further work for buckling minimization is needed.
The flash lamp annealing substantially improves the microstructure of thin 3C-SiC films due to the high temperature process. Stress relaxation at the interface and eliminate of the cavities occurs in Si, as soon as the irradiated flux is sufficient to melt the Si at the SiC/Si interface. Thus solving one of the most serious problems of the 3C-SiC deposition on Si. Since the method acts mainly at the SiC/Si interface can improve very thin SiC films which subsequently can be used as substrates for GaN deposition leading to good quality, low cost GaN/SiC/Si structures.
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