Résultats exploitables
Based on the experience with the development of MW plasma reactors, a novel MW plasma geometry "CAP" (Circumferential Antenna Plasma reactor) has been developed. The CAP system is able to deposit homogeneously thick diamond films onto silicon wafer samples of 51mm diameter. These coatings exhibited good adhesion and uniform quality over the sample surface and the free diamond films exhibited very low levels of absorption in the Infra-red spectrum. For the cemented carbide substrates the silicide treatment technique was developed and coating adhesion was found to be comparable with that obtained using the Rockwell indentation technique. The diamond coatings exhibited very good adhesion onto the cutting edge of toll SiALON tool inserts. Diamond film growth rates of 1µm per hour were obtained over a 5cm diameter silicon wafer at 55 mBar. Increasing the deposition pressure to 80 mbar the film growth rates increased to up to 4 µm per hour over an 1 cm area close to the centre of the wafer.
An optimal adaptation of silver bromide / silver chloride optical wave-guides was realised by a hermetic seal with an optical window of diamond.
Based on the researches of the first CAP reactor's work, a design of a new device with the frequency 915 MHz, input power 30kW, work pressure 30-1000 Mbar for a deposition on a sample with D=125 and D=200mm and supposed high depositing speed was developed. Finally the realisation of the new CAP reactor with 915 MHz frequency and the optimisation on the max. deposition rate is planned.
Within the scope of the project a 915 MHz microwave generator with highly innovative design and unmatched power stability was developed too. The equipment is based on the concept of 3 different switching power supplies at 14 kW.
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