Objective IN THE DEVELOPMENT OF SOLAR CELLS ON THE BASIS OF AMORPHOUS SILICON-HYDROGEN (A-SI:H) ONE OF THE PROBLEMS IS STILL DEGRADATION OF THE INTERFACE AT THE ENTRANCE OF THE CELL BETWEEN THE TRANSPARANT CONDUCTIVE OXIDE (TCO), USUALLY SNO2, ON GLASS AND THE FIRST, MOSTLY P-TYPE SILICON (CARBIDE) LAYER. THE DEGRADATION IS MAINLY DUE TO REDUCTION OF SNO FOLLOWED BY DIFFUSION OF SN INTO SI OCCURING DURING THE GLOW-DISCHARGE DEPOSITION OF A-SI:H FROM SIH4 (SILANE). THE PRESENT INVESTIGATIONS ARE MEANT TO OBTAIN PROFILE ANALYSES ON DIFFERENTLY PREPARED INTERFACES BY AID OF SEVERAL TECHNIQUES. THESE COMPRISE LOW-ENERGY-ION-SCATTERING (LEIS), ELECTRON SPECTROSCOPY FOR CHEMICAL ANALYSIS (ESCA) AND AUGER ELECTRON SPECTROSCOPY (AES). DIFFERENCES IN PREPARATION OF THE INTERFACE HAVE MAINLY REGARD TO CHANGES IN THE GLOW-DISCHARGE DEPOSITION PARAMETERS, SUCH AS THE TEMPERATURE OF THE SUBSTRATE AND TO APPLICATION OF THIN DIFFUSION BARRIERS. Fields of science natural scienceschemical sciencesinorganic chemistryinorganic compoundsengineering and technologymaterials engineeringnatural scienceschemical sciencesinorganic chemistrymetalloidsnatural sciencesphysical sciencesopticsspectroscopy Programme(s) FP1-ENNONUC 3C - Research and development programme (EEC) in the field of Non-Nuclear Energy, 1985-1988 Topic(s) Data not available Call for proposal Data not available Funding Scheme CSC - Cost-sharing contracts Coordinator EINDHOVEN UNIVERSITY OF TECHNOLOGY Address Den dolech 2 5600 MB Eindhoven Netherlands See on map EU contribution € 0,00
