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DEVELOPMENT OF THE SCIENTIFIC AND TECHNICAL BASIS FOR INTEGRATED AMORPHOUS SILICON MODULES

Objective



IN THE DEVELOPMENT OF SOLAR CELLS ON THE BASIS OF AMORPHOUS SILICON-HYDROGEN (A-SI:H) ONE OF THE PROBLEMS IS STILL DEGRADATION OF THE INTERFACE AT THE ENTRANCE OF THE CELL BETWEEN THE TRANSPARANT CONDUCTIVE OXIDE (TCO), USUALLY SNO2, ON GLASS AND THE FIRST, MOSTLY P-TYPE SILICON (CARBIDE) LAYER. THE DEGRADATION IS MAINLY DUE TO REDUCTION OF SNO FOLLOWED BY DIFFUSION OF SN INTO SI OCCURING DURING THE GLOW-DISCHARGE DEPOSITION OF A-SI:H FROM SIH4 (SILANE). THE PRESENT INVESTIGATIONS ARE MEANT TO OBTAIN PROFILE ANALYSES ON DIFFERENTLY PREPARED INTERFACES BY AID OF SEVERAL TECHNIQUES. THESE COMPRISE LOW-ENERGY-ION-SCATTERING (LEIS), ELECTRON SPECTROSCOPY FOR CHEMICAL ANALYSIS (ESCA) AND AUGER ELECTRON SPECTROSCOPY (AES). DIFFERENCES IN PREPARATION OF THE INTERFACE HAVE MAINLY REGARD TO CHANGES IN THE GLOW-DISCHARGE DEPOSITION PARAMETERS, SUCH AS THE TEMPERATURE OF THE SUBSTRATE AND TO APPLICATION OF THIN DIFFUSION BARRIERS.

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Coordinator

EINDHOVEN UNIVERSITY OF TECHNOLOGY
Address
Den Dolech 2
5600 MB Eindhoven
Netherlands

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