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Metallic intermediate band solar cells for high efficiency and low cost in photovoltaics

Objective

Here we aim at proving the feasibility of a new solar cell concept based on a semiconductor having an additional band within the band gap. Theoretical efficiency limit is of 63.1% to compare ordinary Shockely-Queisser solar cells, of 40.7%. This improved potential is because photocurrent can be produced at energy higher that the one of the photons absorbed. For it, two photons produce a single high-energy electron-hole pair. For the prototype fabrication, we shall follow two alternative paths: MBE precise nano-technology and cheap thin film nano-technology. A prototype solar cell will be fabricated. The R&D described here aims at fulfilling the EC long-term goal of cell cost <0.5. /Wp. We justify in the proposal that this goal cannot be achieved by market driven R&D only. Scientific breakthroughs are needed, as the one attempted here.

Funding Scheme

CSC - Cost-sharing contracts

Coordinator

N/A

Participants (4)

COMPOUND SEMICONDUCTOR TECHNOLOGIES LTD
United Kingdom
Address
Block 7, Kelvin Campus, West Of Scotland Science P
G20 OTH Glasgow
HAHN-MEITNER-INSTITUT BERLIN GMBH
Germany
Address
100,Glienicker Straße 100
14109 Berlin
ISOFOTON S.A.
Spain
Address
Calle Caleta De Velez 52, Pol Ind. Santa Teresa
Malaga
UNIVERSITY OF GLASGOW
United Kingdom
Address
Oakfield Avenue, Rankine Building
G12 8LT Glasgow