A consortium has been formed by partners stemming from research and industry in order to progress towards the development of a cost-effective thin-film crystalline Si technology based on thermally assisted CVD as the deposition technique for the active crystalline Si-layer. The project focuses on three well-defined substrate options: Si-ribbons, conductive ceramics based on infiltrated SiAlON and insulating ceramics based on SiAlON. After the midterm assessment, the most promising conductive, respectively a one-side contacted monolithic module process. The active layers for these devices will be grown in a specifically developed continuous high-throughput CVD-reactor.
Funding SchemeCSC - Cost-sharing contracts
2600 GA Delft
2132 AM Hoofddorp
79110 Freiburg (In Breisgau)