This project will involve the development and exploitation of double high mobility two-dimensional electron gas (2DEG) structures. These will be fabricated by a combination of molecular beam epitaxy growth of GaAs/AlGaAs heterostructures with in-situ focussed ion beam lithography. These techniques will allow the fabrication of structures with patterned front and back gates. Hence it will be possible to separately contact the two gases.
Magneto-transport measurements will be made at milli-Kelvin temperatures and in magnetic-fields up to 18 Tesla. By changing the spacing between the two 2DEGs these structures move from a regime of tunnelling to a regime of weak phonon and coulomb mediated interaction. A variety of very high mobility structures will be studied in these regimes and this work will be extended to one-dimensional and zero-dimensional structures.