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Content archived on 2024-05-14

Magnetic and transport properties of semiconductors including ferromagnetic clusters

Objective



Recently, submicron ferromagnets have been incorporated into GaAs and InAs by Mn+ ion implantation or by molecular beam epitaxy (MBE). At the IMEC laboratory,. spherical MnAs ferromagnetic particles with controllable diameters (5 - 30 nm) are formed in a two step process consisting of the epitaxy of a homogeneous Ga1-xMnxAs layer at low temperature using MBE followed by phase separation upon annealing. The motivation of this research is the development of novel magnetoelectronic device structures for technological applications (read-heads, nonvolatile memories). Effects such as giant magnetoresistance (seen in metallic multilayers and metallic granular systems) are highly desirable in semiconductors host, as such materials would offer great potential for exploring carrier spin scattering because the carrier densities are tunable through a wide range and their spatial confinement is easily controlled. The main part of this work will involve the fabrication of semiconductors including ferromagnetic clusters using MBE and the studies of magnetic and transport properties of such novel structures.

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Programme(s)

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Topic(s)

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Funding Scheme

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Coordinator

Aristotle University of Thessaloniki
EU contribution
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Address
Analytical Chemistry Lab
54006 Thessaloniki
Greece

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Total cost

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