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Gaas/inas quantum-wire arrays on vicinal surfaces - from growth to electronicproperties

Objective



Research objectives and content lD ELECTRON SYSTEMS IN QUANTUM WIRE SUPERLATTICES WILL BE FABRICATED BY LATERALLY ORGANIZED EPITAXY OF GaAs AND InAs FRACTIONAL LAYERS ON VICINAL SUBSTRATES. THEIR INTEREST FOR HEMT DEVICES WILL RESULT FROM THE ENHANCED lD CONDUCTIVITY AND THE lD LIKE DENSITY OF STATES IN THESE STRUCTURES. THIS PROGRAMME IS BASED ON RECENT RESULTS OBTAINED AT L2M ON GaAs/AlAs LATERAL SUPERLATTICES AND AT FUJITSU ON GaAs/InAs LATERALLY ORGANIZED ALLOY. USING MOLECULAR BEAM EPITAXY AND GaAs OR InP SUBSTRATES (WITH ATOMIC TERRACES OF WIDTH OF 10 nm), LATERAL POTENTIAL MODULATIONS OF - 100 meV OR MORE ARE EXPECTED. THE KEY TO SUCCESS IS BELIEVED TO BE IN THE COUPLING OF THE GROWTH STUDIES (INCLUDING UHV-STM MEASUREMENTS OF THE VICINAL SURFACE) WITH MEASUREMENTS OF THE ELECTRICAL CONDUCTIVITY, WHICH WILL DEPICT NEW EFFECTS DUE TO THE lD CARRIER CONFINEMENT (FERMI SURFACE DISTORTION, lD SCREENING, VAN HOOVE SINGULARITIES). MEASUREMENTS OF THE TRANSCONDUCTANCE OF HEMT WITH THESE lD SUPERLATTICES IN THE CHANNEL WILL BE PERFORMED. Training content (objective, benefit and expected impact) THE RESEARCH PROJECT WILL BE DIRECTED TOWARDS THE AWARD OF A PH.D. THE OBJECTIVE IS TO GET A COMPREHENSIVE TRAINING ON THE EPITAXY OF LOW DIMENSIONAL STRUCTURES MADE OF SEMICONDUCTORS AND OF THEIR STRUCTURAL ELECTRONIC PROPERTIES. THE REALIZATION OF THIS OBJECTIVE IS NOT POSSIBLE IN MUNICH, SINCE THERE IS NOT A MBE- MACHINE. Links with industry / industrial relevance (22) HEMT'S WITH ENHANCED HYPERFREQUENCY MEASUREMENTS ARE OF GREAT INTEREST FOR TELECOMMUNICATIONS. L2M IS ASSOCIATED TO CNET (FRANCE TELECOM) WHICH IS GOING TO BE TAKEN OVER BY ALCATEL. WE ALSO HAVE A SCIENTIFIC COLLABORATION WITH FUJITSU LAB.

Funding Scheme

RGI - Research grants (individual fellowships)

Coordinator

CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
Address
196 Avenue Henri Ravera
92225 Bagneux
France