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With present state of art systems integrated circuit (IC) structure sizes down to 0.35 um can be realized which correspond to 64 Megabit memory chips. For design rules below 0.3 um, 248 nm deep ultraviolet (UV) steppers are now rapidly being installed for volume production. The project realises the application of 193 nm lithography to produce the 1 and 4 Gigabit chip generations from 0.18 to 0.12 um structures. For this purpose the project was divided into the following two work packages: development of a 193 nm high NA large field lens using quartz and calcium fluoride as lens materials and a 193 nm illumination system; cooperation of all equipment users to generate user inputs (to check that all main functions are in accordance with the users' goals and road-maps, and the state of the art of the resist technology) and to develop (the best possible) resist process. So far high performance scanning stages and excellent imaging were demonstrated with the PAS 5500/500 at 248 nm and the design of 193 nm projection optics, including calcium fluoride use, has been completed; excellent optical polishing quality of the calcium fluoride, using Zeiss patented local polishing techniques has been demonstrated; argon fluoride laser quality has been demonstrated. The PAS 5500/900 components and assemblies are now in production, for building the first machines. The final result of the project will be a 193 nm exposure tool and processing compatible with manufacturing requirements. This will help to strengthen the European lithographic equipment industry and to keep Europe competitive in the industry on a global scale.
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