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Contenido archivado el 2024-05-14

Spin-dependent nanoelectronics

Objetivo

Four main objectives are defined:

- to develop a fabrication technology of mesoscopic magnetic/semiconductor quantum structures, employing the full strength of state-of-the art nano-fabrication and semiconductor technology with emphasis on large-scale fabrication and compatibility with IC manufacturing;
- to explore the physics and mechanisms of spin-dependent transport in integrated semiconductor / ferromagnetic structures;
- to build optimised devices starting from the 3 defined concepts: a Vertical Spin Transistor, a Lateral Spin Transistor and a Magnetically Modulated Semiconductor Transport device;
- to assess magneto-electronic circuit applications in the fields of non-volatile memory, programmable logic and reconfigurable Input/Output circuits, with the first efforts in design and simulation.

It is the intention to combine expertise in semiconductor quantum structures and nano-magnetics to target the field of magneto-electronics as an important and potentially useful class of quantum devices.

We propose to study and develop three device implementations based on spin-dependent transport or magnet/semiconductor interactions, of which proof-of-principle demonstrations have been made. These device implementations will be developed along parallel routes each covering nano-technology, device physics and device development and characterisation.

- Implementation 1: Vertical spin transistor
Semiconductor / ferromagnetic structure with a semiconductor emitter and collector and a magnetic base, that shows vertical ballistic spin-polarised transport. The spin-dependent scattering in the base is dependent on the magnetisation state of that base. Hence the current through the device will be modulated upon change of that magnetisation.
- Implementation 2: Lateral spin transistor
Spin-polarised current in a semiconductor channel from a magnetic source contact to a magnetic drain contact. Modulating the spin current with a gate or changing the magnetisation state of a contact leads to a modulation of the drain current.
- Implementation 3: Magnetically modulated semiconductor device
The electronic transport in a semiconductor quantum structure can be modulated by an imposed magnetic modulation (random or periodic) leading to considerable magnetoresistance effects. This change in resistance leads to novel device concepts.

Magneto-electronic devices offer potential for application in future nano-electronic circuits. We will work on aspects that will facilitate the use of the new device concepts in future circuits. These include the nano-magnetism studies, on-chip magnetisation reversal and power/speed aspects. Design and simulation tasks will be undertaken on selected circuit option where (programmable) magneto-electronic devices will be useful: magnetic non-volatile memories, programmable logic gates or reconfigurable Input/Output circuits.

The magneto-electronic devices find their application in many electronic circuits. There is strong interest today for smart sensors and magnetic read heads. But also, first magnetic solid state memories have been demonstrated, opening the exciting field of integrated magneto-electronics. Other circuits such as (magnetically) programmable logic and reconfigurable I/O will generate industrial interest if the device concepts can be fully developed. SPIDER will provide new developments and secure a strong European presence in the field of integrated magneto-electronics, where US and Japan are already taking initiative.

The project aims to study and develop quantum effect low-power nano-scale devices based on spin-dependent transport and magnetic interactions in semiconductor quantum structures. These devices will be fabricated using innovative solutions for integration of artificial magnetic nanostructured films and multilayers in semiconductor components.

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Coordinador

Interuniversity Microelectronics Centre
Aportación de la UE
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Dirección
Kapeldreef 75
3001 Leuven
Bélgica

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Participantes (8)

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