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Economical production of sige material for microelectronics and optoelectronics applications

Objective

The project will develop an economical, reliable 200/300 mm industrial tool for fabrication of SiGe pseudosubstrates by growing relaxed layers of SiGe on silicon wafers. The project will demonstrate that SiGe-PS can be used for the fabrication of high performant devices for Microelectronics and Optoelectronics (MOSFET's, Electroluminescent diode and Solar cell). These demonstrations: i) open the road to overcome severe bottleneck CMOS technology will face in the next 10/15 years ii) open the road to monolithic integration of GaAs with bulk silicon and fabrication of integrated EL diode for System on Chip applications iii) allow fabrication of cheap large area solar cells. The Consortium gathers together prestigious European laboratories in the fields of SiGe, dep sumicron CMOS technologies, optoelectronics. Project achievements will increase competitiveness of European Technology.

Funding Scheme

CSC - Cost-sharing contracts

Coordinator

STMICROELECTRONICS S.A.
Address
Boulevard Romain Rolland 29
92120 Montrouge
France

Participants (6)

CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
France
Address
Route De Nozay
91460 Marcoussis
JOHANNES KEPLER UNIVERSITAET LINZ
Austria
Address
Altenbergerstrasse 9, Halbleiterphysikgebaude
4040 Linz
POLYTECHNIC OF MILAN
Italy
Address
Piazza Leonardo Da Vinci 32
20133 Milano
UNAXIS BALZERS LTD
Liechtenstein
Address

9496 Balzers
UNIVERSITY COLLEGE CORK, NATIONAL UNIVERSITY OF IRELAND, CORK
Ireland
Address
Lee Maltings, Prospect Row
Cork
UNIVERSITY OF WARWICK
United Kingdom
Address
Gibbet Hill Road
Coventry