Skip to main content

Development of low dislocation density gallium nitride substrates

Objective

The project will develop a growth technique suitable for the production of GaN wafers. To achieve production grade material the defect concentration and in particular dislocation density must be reduced by more than 3 orders of magnitude compared with the standard material of today. Commercial production implies a well-controlled, reproducible and scaleable technique, demands that are met by the use of Hydride Chemical Vapour Deposition (HCVD). Material quality will be evaluated using a number of device demonstrators, a UV LED, a high power HEMT and a violet laser diode. These devices will not be developed as part of the program, but structures based on existing technology at the respective partner organisations will be manufactured. In terms of device goals the project aims to demonstrate dramatically improved performance that will motivate a rapid uptake of Nitride technology in Europe.

Funding Scheme

CSC - Cost-sharing contracts

Coordinator

ACREO AB
Address
Isafjordsgatan 22
164 40 Kista
Sweden

Participants (4)

INSTYTUT WYSOKICH CISNIEN - POLSKA AKADEMIA NAUK
Poland
Address
28-37,Sokolowska 29-37
01 142 Warszawa
LINKOEPING UNIVERSITY
Sweden
Address
Fysikhuset, Infart, 4, Valla
58183 Linköping
OSRAM-OPTO SEMICONDUCTORS GMBH
Germany
Address
Wernerwerkstrasse 2
93009 Regensburg
UNIVERSITAET BREMEN
Germany
Address
Kufsteiner Strasse
28334 Bremen