Devices for ultrafast optoelectronics made from low-temperature grown gaas and related material

Project Information

Grant agreement ID: IC15980803

Project closed

Start date 1 October 1998

End date 30 September 2001

Funded under

• Specific research, technological development and demonstration programme in the field of cooperation with third countries and international organizations, 1994-1998

Total cost € 0,00

EU contribution No data

Coordinated by

UNIVERSITÉ DE SAVOIE
France

Fields of science

• natural sciences › physical sciences › electromagnetism and electronics › optoelectronics

Programme(s)

• FP4-INCO - Specific research, technological development and demonstration programme in the field of cooperation with third countries and international organizations, 1994-1998

Topic(s)

• 010218 - Advanced communications and telematics applications

Call for proposal

Data not available

Funding Scheme

CON - Coordination of research actions

Coordinator

UNIVERSITÉ DE SAVOIE

• EU contribution: No data
• Address: Campus Scientifique ; 73376 LE BOURGET DU LAC ; France
• Total cost: No data

Participants (3)

Kungliga Tekniska Högskolan

Sweden

• EU contribution: No data
• Address: 100 44 Stockholm
• Total cost: No data

SEMICONDUCTOR PHYSICS INSTITUTE

Lithuania

• EU contribution: No data
• Address: A. Gostauto 11 ; VILNIUS
• Total cost: No data

WARSAW UNIVERSITY

Poland

• EU contribution: No data
• Address: 69,Hoza 69 ; 00 681 WARSZAWA
• Total cost: No data