Electron transport and avalanche ionisation in 4H-SiC pn-structures at high electric field strength; development of W-band SiC IMPATT diode with pulse power higher of 60 W

Project Information

Grant agreement ID: INTAS-1997-01386

Project closed

Start date 1 February 1999

End date 31 March 2001

Funded under

• International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993-

Total cost No data

EU contribution € 59 900,00

Coordinated by

Foundation for Research and Technology-Hellas
Greece

Programme(s)

• IC-INTAS - International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993-

Topic(s)

• 1B - Condensed Matter, Optics and Plasma Physics
• CNES - CNES

Call for proposal

Data not available

Funding Scheme

Data not available

Coordinator

Foundation for Research and Technology-Hellas

• EU contribution: No data
• Address: Vassilika Vouton ; 711 10 Heraklion, Crete ; Greece
• Total cost: No data

Participants (3)

Institut National Polytechnique de Grenoble

France

• EU contribution: No data
• Address: 23, rue des Martyrs ; 38016 Grenoble
• Total cost: No data

Russian Academy of Sciences

Russia

• EU contribution: No data
• Address: Politekhnicheskaya 26 ; 194021 St. Petersburg
• Total cost: No data

State Enterprise Research Institute "ORION"

Ukraine

• EU contribution: No data
• Address: 8a, Ezhena Pot'e Str. ; 252128 Kiev
• Total cost: No data