Objective
The aim of the project is to study ultra-fast processes in semiconductor laser structures which can provide high-power short pulses for a new generation of laser-radar systems. The idea is to use the Q-switching laser operating regime as a source of sub-nanosecond light pulse.
The research includes the spectral and time-resolved investigation of a Q-switching regime of single- and double-heterostructure GaAs/AlGaAs lasers in a wide range of temperatures and current densities (A.F.Ioffe Physico-Technical Institute group). A point of interest is the physical mechanism of the high excitation Q-switching regime which is based on the band energy structure of a heavily-doped semiconductor used as an active layer for the laser structure. Ultra-fast GaAs thyristors and step-recovery diodes will be developed for laser pumping (A.F.Ioffe Physico-Technical Institute, Giricond Institute and Raitsyn's group). High-speed spectrum adjusted metal-semiconductor-metal photodetectors compatible with electronic integrated circuits (Giricond Research and Development Institute group) and high-frequency amplifiers (Oulu University group) will be designed for pulse monitoring. High-speed optical and electrical characterization (up to 50 GHz) will be supplied by the Ulm University group. Designed elements will be integrated and studied in the high-resolution radar system by the Oulu University group.
Topic(s)
Call for proposal
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90570 Oulu
Finland