Ion tracks in superhard semiconductors as basic elements for nanoscale electronic devices and matrices

Informations projet

N° de convention de subvention: INTAS-94-1982

Projet clôturé

Date de début 1 Decembre 1995

Date de fin 30 Novembre 1997

Financé au titre de

• International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993-

Coût total

Aucune donnée

Contribution de l’UE

€ 67 000,00

Coordonné par

Universität Hagen
Germany

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Livrables

Ion tracks in superhard semiconductors as basic elements for nanoscale electronic devices and matrices

Diamond substrates of natural diamond, synthetic diamond with various nitrogen and boron content, CVD diamond films, and silicon(used for comparative studies) have been used for the investigations. Selection of the electronic quality substrates has been performed by the cathodoluminescence and microwave-photoconductivity method. The substrates have been irradiated with C, N, Ni, Co, Cu, B, Li,Xe ions with energies ranging from 10 keV/a.m.u. to 5 MeV/a.m.u. in order to create the ion tracks (high energy ion implantation),electrically active areas (B and Li ion implantation) and optically active centers (N, Ni and Xe ion implantation). Impurity-defect structure, electrical and optical parameters of the ion-irradiated layers have been studies by optical, RBS, EPR, STM and electrical methods. It has been established that the high energy ion irradiated areas have a multi-layer structure the most characteristic layer being that containing the ion tracks. A quasi one-dimensional internal atom structure (tubelike or even fullerene-like) of the ion track in diamond has been proposed, the most specific features of which are the structural orientation along the ion-beam direction. The axial symmetry corresponding to that of the plane perpendicular to the ion track, high one-dimensional electrical conductivity, and onedimensional energy transfer by solitons (spill waves). Feasibility of creation of ail active diamond based electronic device with thestructure -conductive carbon - insulating diamond - conductive carbon" has been studied on the microelectronic p-i-p, p-i-n and p-1-M diode and transistor prototype structures.