Investigation of interface characteristics and electrochemical properties of Pt/LaF3/Si as a prospective chemical sensor

Project Information

Grant agreement ID: INTAS-94-3643

Project closed

Start date 1 January 1995

End date 31 December 1996

Funded under

• International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993-

Total cost No data

EU contribution € 50 000,00

Coordinated by

Humboldt-Universität zu Berlin
Germany

Objective

A semiconductor sensor for the determination of fluorine and hydrogen fluoride can be obtained using the simple structure Si/LaF3/Pt. The electronic properties of the sensor are mainly determined by the Si/LaF3 interface, while the sensitivity is due to the reaction at a three phase boundary LaF3/Pt/gas.

The investigation of both interfaces will contribute to a better understanding of the excellent steepness of the sensor and of some problems in sensor stability. Various methods such as vacuum deposition, sputtering, impedance spectroscopy, Bragg diffraction, capacitance measurements and DLT-spectroscopy will be combined with a mathematical modelling of the results.

Programme(s)

• IC-INTAS - International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993-

Topic(s)

• 32 - Analytical and Physical Chemistry

Call for proposal

Data not available

Funding Scheme

Data not available

Coordinator

Humboldt-Universität zu Berlin

• EU contribution: No data
• Address: Bunsenstraße 1 ; 10117 Berlin ; Germany
• Total cost: No data

Participants (3)

Moscow State University M.V. Lomonosov

Russia

• EU contribution: No data
• Address: 119899 Moscow
• Total cost: No data

Russian Research Centre I.V. Kurchatov Institute

Russia

• EU contribution: No data
• Address: 123182 Moscow
• Total cost: No data

Université de Paris-Sud - Paris XI

France

• EU contribution: No data
• Address: 91405 Orsay
• Total cost: No data