Objetivo
A semiconductor sensor for the determination of fluorine and hydrogen fluoride can be obtained using the simple structure Si/LaF3/Pt. The electronic properties of the sensor are mainly determined by the Si/LaF3 interface, while the sensitivity is due to the reaction at a three phase boundary LaF3/Pt/gas.
The investigation of both interfaces will contribute to a better understanding of the excellent steepness of the sensor and of some problems in sensor stability. Various methods such as vacuum deposition, sputtering, impedance spectroscopy, Bragg diffraction, capacitance measurements and DLT-spectroscopy will be combined with a mathematical modelling of the results.
Convocatoria de propuestas
Data not availableRégimen de financiación
Data not availableCoordinador
Humboldt-Universität zu Berlin
Aportación de la UE
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Dirección
Bunsenstraße 1
10117 Berlin
Alemania
10117 Berlin
Alemania
Coste total
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