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Contenu archivé le 2022-12-23

Ferroelectricity on the molecular level

Objectif

The project will develop and explore novel ultrathin ferroelectric (FE) Langmuir-Blodgett (LB) films, consisted of several molecular monolayers, fabricated from copolymerP(VDF-TrFE) (70/30) demonstrating a switching phenomena at a nanometer size scale to provide a ferroelectric local reversal polarization at a atomic-molecular scale. Preparations and studies of these new nano-materials will be carried out both experimentally and theoretically at the following approaches:
- Fabrication of multi-layers and domain structure of homogeneous ultrathin FE LB copolymer films as well as possible recognition of a domain size at the critical structural FE scale,
- Fabrication of both monolayer and multi-layer composite structure of heterogeneous FE LB copolymer ultrathin films , embedding insulator layers as well as situated on the semiconductors substrate,
- Formation of a composite ultrathin LB FE-semiconductors structure,
- Aging and degradation processes of all prepared structures.
All structures and speciments will be explored theoretically and experimentally, correspondingly:
- Surface properties and atomic-molecular structural alterations will be studied owing to STM and exoelectron emission technique,
- High resolution time technique will applied on electrical characterization, polarization and conductance switching and others transients processes,
- Computational modelling and simulation will be directed to all proposed models and mechanisms at both at the microscopic quantum-chemical scale l and for the condensed matter continuum.
The results will deliver new fundamental knowledge and practical applications:
- Novel nano-sized ultra thin copolymer FE LB based materials for nano-technological and molecular electronic applications will be reached,
- New fundamental molecular mechanism of FE switching in the ultra thin FE LB films will be explored,
- New computational technology and software for modelling and preparation of various FE LB structures and nano-devices will be achieved,

The results are planned for implementation for molecular electronics and nanotechnologies needs. New benefits in applications of nano-devices, such as completely new memory devices, will be challenged.

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Coordinateur

RIGA TECHNICAL UNIVERSITY
Contribution de l’UE
Aucune donnée
Adresse
KALKU, 1
RIGA
Lettonie
Coût total
Aucune donnée

Participants (3)