Objective
The overall objective of this project is to exploit the best techniques to prepare nanometric structures for the realization of photo-thermo-tenso-converters.
Research activities can be divided in four stages:
a) Synthesizing of nanometric films and layers of oxides and silicides based on transitional metals by using laser technologies.
The objective is to deposit structures with definite stoichiometri
b). Also pulsed laser ablation of composite Fe(Cr) Si-C targets can lead to deposition of compound films with the desired composition. The expected results are quantitative data about physicalchemical heterogeneous processes on the gassolid interface under the action of laser radiation for obtaining nanometric structures with definite electrical and optical properties. We intend to synthesize films and layers with a composition which results from two or more phases with variable equivalent band gap in the range 0.01-1.0 eV to be used for IR converters (sensors);
c) Investigation of electrical, optical properties of obtained nanometric structures and elaboration of physical models for sensor elements. Compound films with variable composition can present a broad spectrum of electrical and optical properties. They have to be accurately analyzed in order to find the combination that can present the best solution for each type of sensors. Since a parametric study would present the inconvenient of a large consumption of time and materials, an appropriate model can result very effective to reduce the number of parameters and their range;
d) Topology formation (lithography) of the layers,composition by laser chemical vapor deposition (LCVD), pulsed laser deposition (PLD), direct current sputtering (DCS) and electron beam sputtering/evaporation methods followed by laser or furnace annealing of deposited films;
e) Investigation of heterogeneous processes on gassolid interface to get quantitative data about heterogeneous processes during the LCVD and PLD processes in order to deposit structures of the desired band gap width. During the LCVD process, it is possible to deposit films with definite content of Fe, Cr, O and C atoms on Si substrates. By annealing the deposit by Nd:YAG laser radiation or in a furnace, it is possible to promote the formation of semiconductor layers such as FeSi2-xCx and CrSi2-xCx (carbide-silicides). During LCVD process it is possible to deposit oxide thin films such as Fe2O3-X , Cr2O3-X (0 that can be realized by laser induced local film removal and laser induced film transfer. Formation of the required configuration can be tested by laser beam scanning or pattern transfer accordingly to a computer program.
Call for proposal
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73100 Lecce
Italy