Novel Based Integrated Heterostructure Scintillation Detectors (IHSD) of ionising radiation

Project Information

INTAS 2005-104-7519

Grant agreement ID: INTAS2005-104-7519

Project closed

Start date 1 April 2006

End date 30 September 2008

Funded under

• International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993-

Total cost € 142 855,00

EU contribution € 95 000,00

Coordinated by

CERN
Switzerland

Objective

This Project proposes to make use of the unique combination of the ZnSe(Te) crystal properties - the new high effective red scintillator, the broad range semiconductor, and high sensitivity optoelectronic material - for R&D of novel A2B6 integrated micro- and nano-heterostructure detectors. It is planned to develop detectors of two types. The integrated (based on heterostructure n-ZnSe/p-ZnTe/n-CdSe) detectors of the scintillator-photodiode type are intended for registering X-rays and they are to be used in digital industrial radiography, medical computer tomography, and in the antiterrorist inspection systems of customs control. The sensitivity of novel integrated detectors can be several times as high as that of the standard construction containing a silicon photo-receiver due to the absence of losses in the intermediate optical layer and a good spectral matching. Another type of detectors (Schottky diodes based on nano-structure ZnSe/metal) is promising for application in individual professional dosimeters that selectively register UV-radiation (solar dosimeters), as well as for solar cells. Development of solar dosimeters is especially actual, taking into account the ozone layer depletion and ozone hole enlargement, which are typical of southern countries and places of mountain climate, as well as for controlling the UV irradiation level in medical care and prevention establishments. Pilot investigations carried out by the Project teams have indicated that: (i) combined ZnSe(Te)-heterostructure is characterized by the photosensitivity spectrum in the range of the inherent luminescence emitted by the ZnSe(Te) crystal, the maximum being at 640 nm, and the conversion efficiency of 0.2-0.3 A/W, which is comparable with silicon photo-receivers; (ii) the sensitivity of A2B6 Schottky photodiodes in the UV range is higher than that of the traditional silicone one; besides, detectors are elaborated selectively sensitive to A and B (cancer dangerous) regions of the UV range.

Keywords

• Interfaces & Microstructures
• Nanostructures
• Quantum Dots
• Semiconductors
• Surfaces

Programme(s)

• IC-INTAS - International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993-

Topic(s)

Data not available

Call for proposal

Data not available

Funding Scheme

Data not available

Coordinator

CERN

• EU contribution: No data
• Address: ROUTE DE MEYRIN ; GENEVA ; Switzerland
• Total cost: No data

Participants (4)

INSTITUTE OF SCINTILLATION MATERIALS OF NASU (ISMA)

Ukraine

• EU contribution: No data
• Address: LENIN PROSPEKT, 60 ; KHARKIV
• Total cost: No data

MOLDAVIAN STATE UNIVERSITY

Moldova

• EU contribution: No data
• Address: MATEEVICI STR., 60 ; CHISINAU
• Total cost: No data

UNIVERSITÉ CLAUDE BERNARD LYON I

France

• EU contribution: No data
• Address: DOMAINE SCIENTIFIQUE DE LA DOUA, RUE AMPÈRE, 10 ; VILLEURBANNE
• Total cost: No data

VILNIUS UNIVERSITY

Lithuania

• EU contribution: No data
• Address: SAULETEKIO AL., III-9 ; VILNIUS
• Total cost: No data