Assessment of a 300 mm prototype equipment for the manufacture of semiconductor components. The equipment is a compact size, wet process, single tank reactor, dedicated to the pre-clean steps of advanced front-end CMOS processes (<0.15 µm), e.g., composite gate oxide growth and low temperature epitaxy and hetero-epitaxy. The assessment will cover manufacturing relevant parameters such as throughput, CoO and liquid consumption reduction. It will also evaluate the concept of diluted chemistries for both chemicals consumption reduction and minimum unwanted surface state modification prior to the following process step. Thanks to a coupling with another 300 mm single wafer cluster which benefits of in-line optical characterisation tools, the process parameters of the pre-clean steps will be linked to those of two fundamental steps of the front-end CMOS process: oxidation/nitridation/annealing and low temperature Si and SiGe alloys epitaxy and hetero-epitaxy.
Funding SchemeACM - Preparatory, accompanying and support measures