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Oxidation and EPItaxy pre CLEan treatments

Objective

Assessment of a 300 mm prototype equipment for the manufacture of semiconductor components. The equipment is a compact size, wet process, single tank reactor, dedicated to the pre-clean steps of advanced front-end CMOS processes (<0.15 µm), e.g., composite gate oxide growth and low temperature epitaxy and hetero-epitaxy. The assessment will cover manufacturing relevant parameters such as throughput, CoO and liquid consumption reduction. It will also evaluate the concept of diluted chemistries for both chemicals consumption reduction and minimum unwanted surface state modification prior to the following process step. Thanks to a coupling with another 300 mm single wafer cluster which benefits of in-line optical characterisation tools, the process parameters of the pre-clean steps will be linked to those of two fundamental steps of the front-end CMOS process: oxidation/nitridation/annealing and low temperature Si and SiGe alloys epitaxy and hetero-epitaxy.

Funding Scheme

ACM - Preparatory, accompanying and support measures

Coordinator

FRANCE TELECOM
Address
6 Place D'alleray
75505 Paris 15
France

Participants (5)

INFINEON TECHNOLOGIES SC300 GMBH & CO.KG
Germany
Address
Koenigsbruecker Strasse 180
01099 Dresden
INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW
Belgium
Address
Kapeldreef 75
3001 Leuven
SCP GERMANY GMBH
Germany
Address
Carl-benz-strasse 10
72124 Pliezhausen
SILTRONIC AG
Germany
Address
Hanns-siedel-platz 4
81737 Muenchen
STMICROELECTRONICS SA
France
Address
29 Boulevard Romain Rolland
92120 Montrouge