Objective
We propose to demonstrate in-plane and vertical cavity diode lasers operating at 1300nm using (Ga, In) As quantum dot emitters. These devices based on GaAs substrates are expected to exhibit superior characteristics compared to the classical GaInAsP on InP based devices, with the advantage of lower cost, compatibility with the well established GaAs processing technology, improved reliability and decreased temperature sensitivity. The project will demonstrate 1300nm optical links based on this all GaAs technology and compare the performances with 1300nm GaAs devices.
Fields of science (EuroSciVoc)
CORDIS classifies projects with EuroSciVoc, a multilingual taxonomy of fields of science, through a semi-automatic process based on NLP techniques.
CORDIS classifies projects with EuroSciVoc, a multilingual taxonomy of fields of science, through a semi-automatic process based on NLP techniques.
- natural scienceschemical sciencesinorganic chemistrypost-transition metals
- natural sciencesphysical sciencesopticslaser physics
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Keywords
Call for proposal
Data not availableFunding Scheme
CSC - Cost-sharing contractsCoordinator
16152 GENOVA
Italy