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Gallium Arsenide Second-Window Quantum Dot Lasers

Objectif

We propose to demonstrate in-plane and vertical cavity diode lasers operating at 1300nm using (Ga, In) As quantum dot emitters. These devices based on GaAs substrates are expected to exhibit superior characteristics compared to the classical GaInAsP on InP based devices, with the advantage of lower cost, compatibility with the well established GaAs processing technology, improved reliability and decreased temperature sensitivity. The project will demonstrate 1300nm optical links based on this all GaAs technology and compare the performances with 1300nm GaAs devices.


Mots‑clés

Appel à propositions

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Régime de financement

CSC - Cost-sharing contracts

Coordinateur

ISTITUTO NAZIONALE PER LA FISICA DELLA MATERIA
Contribution de l’UE
Aucune donnée
Adresse
CORSO F. PERRONE 24
16152 GENOVA
Italie

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Coût total
Aucune donnée

Participants (9)