Skip to main content

TUNABLE LASER DIODE BY STARK-EFFECT

Objective

In this project, we will demonstrate a novel class of tunable semiconductor laser diodes (LDs) whose tuning mechanism relies on the quantum-confined Stark effect. This will be achieved by appropriately redesigning the LD active region, such that a fraction of the injected carriers create, in parallel with the lasing action, a space-charge electric field that tunes the lasing wavelength. In this project, we will demonstrate a novel class of tunable semiconductor laser diodes (LDs) whose tuning mechanism relies on the quantum-confined Stark effect. This will be achieved by appropriately redesigning the LD active region, such that a fraction of the injected carriers create, in parallel with the lasing action, a space-charge electric field that tunes the lasing wavelength.

OBJECTIVES
The ultimate objective of this project is to develop a new class of tunable semiconductor laser diodes (LDs) whose tuning mechanism is based on the quantum-confined Stark effect (QCSE). Compared to other tunable LD solutions found in the literature, the QCSE-tunable LDs are compact and simple to process, require single-current control, and can exhibit wide tuning ranges with GHz modulation rates. The general objective in this one-year assessment period is to show the feasibility of this innovative approach, by demonstrating in a semiconductor LD significant wavelength tuning due to QCSE.

Specifically, in this period we will:
(i) demonstrate in InGaAs/AlGaAs-based LDs, grown along (100), a tuning range larger than 3nm at 900nm;
(ii) demonstrate in InGaAs/AlGaAs-based LDs, grown along (111), a tuning range larger than 6nm at 900nm.

DESCRIPTION OF WORK
For demonstration purposes, in this one-year assessment period we will concentrate our efforts on the InGaAs/AlGaAs heterostructure system, even though it should be mentioned that our approach is entirely transposable to any semiconductor system, including those emitting at telecom wavelengths.
The project can be partitioned in two main workpackages: WP1: QCSE-Tunable LD, Along (100). A series of InGaAs/AlGaAs LDs, grown on GaAs (100) substrates, will be fabricated and characterized. In the different samples, we will vary important parameters of the active region, such as width and composition of barrier and quantum well layers, in order to enhance the tunability range of the device.
WP2: QCSE-Tunable LD, along (111). In this part of the work, InGaAs/AlGaAs LDs on (111) GaAs substrates will be fabricated and characterized. The exact design of the (111) active region will be based on the conclusions of WP1 on (100) tunable LDs. Compared to the (100) configuration, the main difference here is that the active quantum well will contain a piezoelectric field of 50-100 kV/cm, which will allow us to enhance significantly the device tunability.

Funding Scheme

ACM - Preparatory, accompanying and support measures

Coordinator

FOUNDATION FOR RESEARCH AND TECHNOLOGY - HELLAS
Address
Vassilika Vouton
71110 Iraklio, Crete
Greece

Participants (1)

COMMISSARIAT A L'ENERGIE ATOMIQUE
France
Address
31-33 Rue De La Federation
75752 Paris Cedex 15