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BALLISTIC NANODEVICES FOR TERAHERTZ DATA PROCESSING

Objective

Because of the increasing amount of information to be transmitted, the development of digital/analog electronic devices for data processing at ultra-high bit rates and/or on high frequency carriers is a key issue.The project intends to design, fabricate and characterise ballistic devices up to room temperature and up to millimetre wave frequencies in view of developing digital/analog electronic devices for THz data processing. The research will exploit ballistic effects, and not phase coherence effects, in nano-scaled AlInAs/InGaAs/InP based devices. This guarantees that operation at room temperature is feasible with sufficient repeatability and robustness. This also ensures a full compatibility with HEMT technology. Because of the increasing amount of information to be transmitted, the development of digital/analog electronic devices for data processing at ultra-high bit rates and/or on high frequency carriers is a key issue.The project intends to design, fabricate and characterise ballistic devices up to room temperature and up to millimetre wave frequencies in view of developing digital/analog electronic devices for THz data processing. The research will exploit ballistic effects, and not phase coherence effects, in nano-scaled AlInAs/InGaAs/InP based devices. This guarantees that operation at room temperature is feasible with sufficient repeatability and robustness. This also ensures a full compatibility with HEMT technology.

DESCRIPTION OF WORK
The project is organised in 3 workpackages(WP).
WP1: Simulation and design: Task 1.1 Monte-Carlo simulations: Design of the ballistic structures using 2D and 3D Monte Carlo codes; Task 1.2 Design of RF interconnects to ballistic devices. Comparison between Ohmic contact and capacitive coupling; Task 1.3 Ballistic device design Design of RF transitions for connections to passive and active ballistic devices.

WP2: Fabrication: Fabrication of the passive and active ballistic devices. The active layer will be a single channel delta doped AlInAs/InGaAs/AlInAs/InP: Task 2.1 Growth of heterostructures by MBE; Task 2.2 Mask fabrication; Task 2.3 Device processing. First batch, process of passive ballistic devices. Second batch, fabrication of Schottky gate active MUX/DEMUX.

WP3: Characterisation Characterisation of fabricated passive and active devices from DC to 65 GHz in the temperature range [4K-300K] and from DC to 220 GHz at room temperature. Determination of noise properties. Task 3.1 RF interconnects to ballistic devices. Problem of matching between the RF interconnects and the ballistic channel; Task 3.2 Development of parameter extraction methods; Task 3.3 Extraction of passive ballistic device parameters; Task 3.4 characterisation of active devices and benchmarking of (de)multiplexer prototype.

Funding Scheme

CSC - Cost-sharing contracts

Coordinator

CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
Address
3, Rue Michel-ange
75794 Paris Cedex 16
France

Participants (3)

UNIVERSIDAD DE SALAMANCA
Spain
Address
Calle Patio Escuelas 1
37008 Salamanca
UNIVERSITE CATHOLIQUE DE LOUVAIN
Belgium
Address
1 Place De L'universite
1348 Louvain-la-neuve
UNIVERSITE DES SCIENCES ET TECHNOLOGIES DE LILLE - LILLE I
France
Address
Batiment A3 Cite Scientifique
59655 Villeneuve D'ascq