Objective Because of the increasing amount of information to be transmitted, the development of digital/analog electronic devices for data processing at ultra-high bit rates and/or on high frequency carriers is a key issue.The project intends to design, fabricate and characterise ballistic devices up to room temperature and up to millimetre wave frequencies in view of developing digital/analog electronic devices for THz data processing. The research will exploit ballistic effects, and not phase coherence effects, in nano-scaled AlInAs/InGaAs/InP based devices. This guarantees that operation at room temperature is feasible with sufficient repeatability and robustness. This also ensures a full compatibility with HEMT technology. Because of the increasing amount of information to be transmitted, the development of digital/analog electronic devices for data processing at ultra-high bit rates and/or on high frequency carriers is a key issue.The project intends to design, fabricate and characterise ballistic devices up to room temperature and up to millimetre wave frequencies in view of developing digital/analog electronic devices for THz data processing. The research will exploit ballistic effects, and not phase coherence effects, in nano-scaled AlInAs/InGaAs/InP based devices. This guarantees that operation at room temperature is feasible with sufficient repeatability and robustness. This also ensures a full compatibility with HEMT technology.DESCRIPTION OF WORKThe project is organised in 3 workpackages(WP).WP1: Simulation and design: Task 1.1 Monte-Carlo simulations: Design of the ballistic structures using 2D and 3D Monte Carlo codes; Task 1.2 Design of RF interconnects to ballistic devices. Comparison between Ohmic contact and capacitive coupling; Task 1.3 Ballistic device design Design of RF transitions for connections to passive and active ballistic devices.WP2: Fabrication: Fabrication of the passive and active ballistic devices. The active layer will be a single channel delta doped AlInAs/InGaAs/AlInAs/InP: Task 2.1 Growth of heterostructures by MBE; Task 2.2 Mask fabrication; Task 2.3 Device processing. First batch, process of passive ballistic devices. Second batch, fabrication of Schottky gate active MUX/DEMUX.WP3: Characterisation Characterisation of fabricated passive and active devices from DC to 65 GHz in the temperature range [4K-300K] and from DC to 220 GHz at room temperature. Determination of noise properties. Task 3.1 RF interconnects to ballistic devices. Problem of matching between the RF interconnects and the ballistic channel; Task 3.2 Development of parameter extraction methods; Task 3.3 Extraction of passive ballistic device parameters; Task 3.4 characterisation of active devices and benchmarking of (de)multiplexer prototype. Fields of science natural sciencescomputer and information sciencesdata sciencedata processing Keywords Nanotechnology Programme(s) FP5-IST - Programme for research, technological development and demonstration on a "User-friendly information society, 1998-2002" Topic(s) 2001-6.2.1 - Nanotechnology information devices Call for proposal Data not available Funding Scheme CSC - Cost-sharing contracts Coordinator CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE EU contribution No data Address 3, RUE MICHEL-ANGE 75794 PARIS CEDEX 16 France See on map Total cost No data Participants (3) Sort alphabetically Sort by EU Contribution Expand all Collapse all UNIVERSIDAD DE SALAMANCA Spain EU contribution No data Address CALLE PATIO ESCUELAS 1 37008 SALAMANCA See on map Total cost No data UNIVERSITE CATHOLIQUE DE LOUVAIN Belgium EU contribution No data Address 1 PLACE DE L'UNIVERSITE 1348 LOUVAIN-LA-NEUVE See on map Total cost No data UNIVERSITE DES SCIENCES ET TECHNOLOGIES DE LILLE - LILLE I France EU contribution No data Address BATIMENT A3 CITE SCIENTIFIQUE 59655 VILLENEUVE D'ASCQ See on map Total cost No data