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A new type of stable amorphous silicon thin film solar module with PIN / TCO / NIP structure

Objective

Solar cells made from hydrogenated amorphous silicon (a-Si:H) with pin structure are well established for powering such consumer devices as watches, pocket calculators and small battery chargers. However, the application of a-Si:H solar modules in the power market is mainly impeded by the light-induced degradation during operation (Staebler-Wronski-Effect). The use of thin i-layers reduces this degradation, but also the amount of absorbed light. The objective of this project is to develop a new type of stocked solar cells having the structure pir/TCO/Nip.


In stacked solar cells, single junctions with thin i-layers are combined In stacked solar cells, single junctions with thin i-layers are combined and a sufficiently large absorption length is obtained. Conventionally, and a sufficiently large absorption length is obtained.
Conventionally, stacked solar cells have the structure pin/pin and consist stacked solar cells have the structure pin/pin and consist of two pin-junctions deposited on top of each other which are electrically of two pin-junctions deposited on top of each other which are electrically connected in series.
connected in series. In order to achieve a high conversion efficiency, the generated photocurrents in both junctions have to be equal. This In order to achieve a high conversion efficiency, the generated photocurrents in both junctions have to be equal.
represents a stringent condition on the two individual i-layer thicknesses which is even more difficult to satisfy in a large area deposition. In our This represents a stringent condition on the two individual i-layer thicknesses which is even more difficult to satisfy in a large area project we want to develop a new type of stacked solar cells having the structure pin/TCO/nip (TCO=transparent conductive oxide). In this deposition.
In our project we want to develop a new type of stacked solar cells having structure the two subcells (pin and nip) are electrically connected in parallel and the two photocurrents simply add up independently of the the structure pin/TCO/nip (TCO=transparent conductive oxide). In this structure the two subcells (pin and nip) are electrically i-layer thicknesses. The two n-layers are directly combined via the TCO-layer in between and the two p-layers will be connected via the front-connected in parallel and the two photocurrents simply add up independently of the i-layer thicknesses.
and back-electrode by suitable patterning of the entire solar module. Finally, an integrated solar module having solar cell stripes of parallel The two n-layers are directly combined via the TCO-layer in between and the two p-layers will be connected via the front- and back-electrode by connected stacked cells and showing a stabilized efficiency of 10 % will be developed.
suitable patterning of the entire solar module.
Finally, an integrated solar module having solar cell stripes of parallel connected stacked cells and showing a stabilized efficiency of 10 % will be developed.

Funding Scheme

CSC - Cost-sharing contracts

Coordinator

Siemens AG
Address
6,Otto-hahn-ring 6
81739 Muenchen
Germany

Participants (3)

Commission of the European Communities
Italy
Address

21020 Ispra - Varese
ITALIAN AGENCY FOR NEW TECHNOLOGY, ENERGY AND THE ENVIRONMENT
Italy
Address
Via Angullarese 301
00060 Roma
University of Ljubljana
Slovenia
Address
25,Trzaska
Ljubljana