Objective Researchers have demonstrated that Scanning Acoustic Microscopy is a viable non-destructive technique for defect characterization in power semiconductor manufacturing. This technique is now used for in-line routine inspection by one of the project partners.DURING PRODUCTION OF SEMICONDUCTOR DEVICES, DEFECTS ARE INEVITABLY INTRODUCED AT VARIOUS PROCESS STAGES, WHICH MAY RESULT IN REDUCED ELECTRICAL PERFORMANCE OR MANUFACTURING YIELD LOSS. EXAMPLES OF SUCH DEFECTS ARE MICROCRACKING OF THE SILICON WAFER OR VOIDS AT THE SILICON-CONTACT METALLIZATION INTERFACE. THE EFFECTS OF THESE DEFECTS ARE PARTICULARLY IMPORTANT IN POWER SEMICONDUCTOR DEVICES (P-I-N DIODES, BJTS, SCRS, RCTS, GTOS), SINCE HIGH VOLTAGE AND CURRENT RATINGS ARE REQUIRED FROM VERY LARGE AREA DEVICES WITH DIAMETERS UP TO 125 MM.THE PURPOSE OF THIS PROJECT IS TO IDENTIFY AND CHARACTERIZE THE DEFECTS USING SCANNING ACOUSTIC MICROSCOPY (SAM) TECHNIQUES, WITH THE AIM OF DEVELOPING A NON-DESTRUCTIVE TEST METHOD FOR ON-LINE PROCESS MONITORING OF POWER SEMICONDUCTOR DEVICES MANUFACTURE. THIS RELATIVELY NEW TECHNIQUE IS EXPECTED TO PROVIDE UNIQUE INFORMATION FOR PROCESS AND DEVICE CHARACTERIZATION. THREE MAIN AREAS OF ACTIVITY WILL BE ADDRESSED.THE FIRST PART OF THE PROJECT WILL BE DEVOTED TO THE CALIBRATION OF THE VARIOUS SAM EQUIPMENTS USED. A MEASUREMENT PROTOCOL AND A CALIBRATION METHODOLOGY WITH MATERIALS USED IN SEMICONDUCTOR PROCESSING WILL BE DEVELOPED.THE CORE OF THE PROJECT WILL BE THE SAM INVESTIGATION OF POWER SEMICONDUCTOR SAMPLES CONTAINING KNOWN DEFECTS, CROSS-IDENTIFIED BY ALTERNATIVE ANALYTICAL TECHNIQUES. THIS ACTIVITY WILL PROVIDE THE ACOUSTIC CHARACTERIZATION OF THE VARIOUS DEFECTS STUDIED.FINALLY THE DIGITAL PROCESSING OF ACOUSTIC IMAGES AND A STATISTICAL CONTROL PROCEDURE FOR THE AUTOMATIC IDENTIFICATION OF DEFECTS WILL BE CONSIDERED.THE RESULTS OF THIS WORK ARE EXPECTED TO LEAD TO THE DEVELOPMENT, NOT NECESSARILY COMPLETED WITHIN THIS PROJECT, OF AN INDUSTRIAL SYSTEM FOR ON-LINE MONITORING OF POWER SEMICONDUCTOR DEVICE MANUFACTURE. Fields of science natural sciencesphysical sciencesopticsmicroscopynatural sciencesphysical sciencesacousticsnatural sciencesphysical scienceselectromagnetism and electronicssemiconductivitynatural scienceschemical sciencesinorganic chemistrymetalloids Programme(s) FP1-BRITE - Multiannual research and development programme (EEC) in the fields of basic technological research and the applications of new technologies (BRITE), 1985-1988 Topic(s) Data not available Call for proposal Data not available Funding Scheme CSC - Cost-sharing contracts Coordinator Ansaldo Trasporti SpA Address Via nuova delle brecce 260 80147 Napoli Italy See on map EU contribution € 0,00 Participants (4) Sort alphabetically Sort by EU Contribution Expand all Collapse all Bertin et Cie S.A. France EU contribution € 0,00 Address 59,rue pierre curie 59 78373 Plaisir See on map GEC Plessey Semiconductors plc United Kingdom EU contribution € 0,00 Address Cheney manor SN2 2QW Swindon See on map Università degli Studi di Genova Italy EU contribution € 0,00 Address 11 a,via opera pia 11/a 16145 Genova See on map Université de Montpellier II (Université des Sciences et Techniques du Languedoc) France EU contribution € 0,00 Address 2 place eugène bataillon 34095 Montpellier See on map
