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On-line Monitoring of Metallic Contamination in Silicon

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Traditionally, for analysis of metallic impurities, techniques such as atomic absorption spectroscopy (AAS) combined with vapour phase decomposition (VPD) have been employed. However, in order to monitor on-line metallic contamination in silicon, new analytical strategies are required and in particular the development of novel on-line monitoring tools. Recently, research has focused on the development of photo-generated minority carrier electrical techniques and in particular electrolytic metal analysis tool (ELYMAT), surface charge analysis (SCA) and microwave photo-conductivity decay (?-PCD) in response to the above mentioned industrial problem. % The goal of the project was the development of comprehensive measurement methodology for determination of extremely low levels of impurities in silicon using novel analytical techniques. The specific objectives were to enhance the measurement capabilities of the ELYMAT, SCA and ?-PCD measurement techniques on a wide range of sample types, to calibrate these measurement tools vis-a-vis wafers with known amounts of contaminants with the aim of developing a comprehensive measurement methodology and finally, to propose this measurement methodology to CENELEC. One of the key results has been the reconciliation of the SCA lifetime to the Shockley-Read-Hall lifetime which other lifetime techniques measure. This relationship is now better understood. Another important result is the discrimination between different elemental metal contaminants using Elymat in the Injection Level Spectroscopy mode. A third important result from the research point of view was the observation of the iron-boron pairing interaction using SCA. This result led to the improved understanding of the SCA lifetime measurement.

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