Objectif
Studies into separation by implantation of oxygen (SIMOX) materials have been conducted as follows:
preparation of Van der Pauw samples;
carbon implantation;
oxygen donors;
double SIMOX layers;
ellipsometry measurements;
new characterization techniques, charge pumping and photoinduced current transient spectroscopy;
comparison of oxygen donor effects on SIMOX material implanted and annealed by various laboratories;
identification and elimination of carbon sources in an implanter;
implantation os germanium for studies of annealing of semiconductors;
development of a theoretical framework for the transport properties of amorphous and microcrystalline doped semiconductors;
characterization of silicon specimens by transmission electron microscopy (TEM) and cross sectional transmission electron microscopy (XTEM);
fabrication of specimens by ion beam synthesis;
materials assessment by ion beam analysis and scanning electron microscopy (SEM);
investigation of the stoichiometry and formation mechanisms of buried layers;
experiments using a swept energy implant.