Double side contacted cells with innovative carrier-selective contacts

Deliverables

Recommendation on the optimization of TCOs, CSJs and multi-wires for optimized optical performance on module level

The development of high performance modules in WP4 will be supported by optimizing optical performance on module level. Technology-related target requirements for TCOs, CSJs and multi-wires for best optical performance will be determined.

Report on social LCA in accordance with international guidance on social LCA

The concept of social acceptance with be assessed using the Social Life Cycle Assessment (social LCA) framework, which has been developed by UNEP and SETAC in accordance with the ISO 14040/44 standards for LCA. The study will assess the potential positive and negative social impacts, including those that are unexpected and unintended.

Report on environmental LCA in accordance with international standards on LCA

The solar cell prototypes will be assessed with an LCA study in accordance with the ISO standards for LCA providing scientific evidence on traditional environmental indicators from primary energy consumption, GHG emissions to water footprint and land use amongst others.

Report on the Round Robin on cells with advanced front-side metallization schemes

The measurement results obtained by each partner will be compared and differences will be discussed. Consequently, measurement rules will be deduced for improvement of accuracy and comparability of calibrated measurements.

Project Identity Set

The project identity set includes a logo, an initial brochure (project presentation including challenges, context, objectives, results, partnership...) a slide Template as well as a poster presentation for public event/ workshop / conference

Public website

Public website set up at the beginning of the project, containing the following sections: Section for open access by the general public with useful and interesting information about the project, i.e. aims & objectives, technological implications, partners list, funding details, links to related sites....; an intranet section which will alow fruitful collaboration within the DISC consortium members

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Publications

Realization of Passivating Contacts Using Industrial Scale PECVD Equipment

Author(s): J.-I. Polzin et al
Published in: SiliconPV 2018 , 2018

Formation of a resistive SiOx layer at the interface of poly-Si to aluminum-doped zinc oxide

Author(s): T. Wietler et al
Published in: SiliconPV 2018 , 2018

"EU Project Special Presentation: Rules and targets of ""Sister projects"" "

Author(s): B. Min and K. Ding
Published in: SiliconPV 2018, 2018

Novel Mask-less Plating Metallization Route for Bifacial Silicon Heterojunction Solar Cells

Author(s): T. Hatt et al
Published in: SiliconPV 2018 , 2018

Temperature-Dependent Contact Resistance Measurements on Carrier-Selective Poly-Si on Oxide Junctions

Author(s): N. Folchert et al
Published in: SiliconPV 2018 , 2018

Silicon rich silicon carbide as poly-Si passivating contacts for Silicon solar cells

Author(s): G. Nogay et al
Published in: SiliconPV 2018 , 2018

Increasing the Photo-generated Current in Solar Cells with Passivating Contacts by Reducing the Poly-Si Deposition Temperature

Author(s): B. Min et al
Published in: SiliconPV 2018, 2018

Analysis of the influence of ITO metallization on phosphorus-doped nanostructured silicon oxide passivating electron contacts

Author(s): J. Stückelberger et al
Published in: SiliconPV 2018 , 2018

Transparent Conductive Oxides for Passivating Rear Contacts

Author(s): L. Tutsch et al.
Published in: SiliconPV 2018, 2018

Efficient Hole Extraction for Metal Oxide Based Silicon Heterojunction Solar Cells: A Simulation Study

Author(s): C. Messmer et al.
Published in: SiliconPV 2018, 2018

Multi-Wire Interconnection of Back-Contacted Silicon Heterojunction Solar Cells

Reliable Copper Plating Process for Bifiacial Heterojunction Cells

Metallization of Silicon Carbide- and Silicon Oxide-Based Layer Stacks as Passivating Contacts for Silicon Solar Cells

Locally Conductive Transport Channel Formation in High Temperature Stable Hole-Selective Silicon-Rich Silicon Carbide Passivating Contact

Author(s): G. Nogay et al.
Published in: EU PVSEC 2017, 2017

Wide-Band Gap Silicon Carbide for Front Side Carrier Selective Contacts

Author(s): A. Ingenito et al.
Published in: EU PVSEC 2017 , 2017

Mixed-Phase Silicon Oxide Layers with Phosphorus and Boron Doping for CoAnnealed Transparent Passivating Front and Rear Contacts

Author(s): J. Stuckelberger et al.
Published in: EU PVSEC 2017, 2017

Copper Plating Chemistry for Solar Cells

Author(s): A. Lachowicz et al.
Published in: EU PVSEC 2017 , 2017

Principles of Carrier-Selective Contacts Based on Induced Junctions

Author(s): Bivour et al.
Published in: EU PVSEC 2017 , 2017

Influence of the Transparent Electrode Sputtering Process on the Interface Passivation Quality of Silicon Heterojunction Solar Cells

Author(s): L. Tutsch et al.
Published in: EU PVSEC 2017, 2017

MoOX and WOX based hole-selective contacts for wafer-based Si solar cells

Author(s): Essig, Stephanie; Dréon, Julie; Werner, Jérémie; Löper, Philipp; De Wolf, Stefaan; Boccard, Mathieu; Ballif, Christophe
Published in: Issue 1, 2017
DOI: 10.5281/zenodo.1087463

PECVD Layers for High and Low Temperature Improved Industrial Solar Cell Processes

Author(s): C. Allebé at al.
Published in: 2017

High volume manufacturing plating equipment for metallization of high efficiency silicon solar cells

Author(s): M. Zwegers, J. Bertens, G. van de Ven
Published in: 2017

Bifacial crystalline silicon homojunction cells contacted with highly resistive TCO layers

Author(s): Elise Bruhat, Thibaut Desrues, Bernadette Grange, Danièle Blanc-Pélissier, Sébastien Dubois
Published in: AIP Conference Proceedings volume 1999, 2018, Page(s) 040004
DOI: 10.1063/1.5049267

From Wafers to Modules to Mass Production: Solving All Bottlenecks in Silicon Heterojunction Technology

DOI: 10.5281/zenodo.1744856

Principles of carrier-selective contacts based on induced junctions

DOI: 10.4229/EUPVSEC20172017-2BO.4.2

Novel mask-less plating metallization route for bifacial silicon heterojunction solar cells

Author(s): Thibaud Hatt, Vivek P. Mehta, Jonas Bartsch, Sven Kluska, Mike Jahn, Dietmar Borchert, Markus Glatthaar
Published in: AIP Conference Proceedings volume 1999, 2018, Page(s) 040009
DOI: 10.1063/1.5049272

Efficient hole extraction for metal oxide based silicon heterojunction solar cells: A simulation study

Author(s): Christoph Messmer, Martin Bivour, Jonas Schön, Martin Hermle
Published in: AIP Conference Proceedings volume 1999, 2018, Page(s) 040013
DOI: 10.1063/1.5049276

p+/n+ polysilicon-on-oxide tunneling junctions as an interface of p-type PERC cells for tandem applications

DOI: 10.1109/pvsc.2018.8548032

A passivating contact concept compatible with a short thermal treatment

DOI: 10.1109/pvsc.2018.8547626

Establishing the “native oxide barrier layer for selective electroplated” metallization for bifacial silicon heterojunction solar cells

Author(s): Thibaud Hatt, Jonas Bartsch, Sven Kluska, Markus Glatthaar
Published in: 15th International Conference on Concentrator Photovoltaic Systems (CPV-15), 2019, Page(s) 040005
DOI: 10.1063/1.5123832

Ex situ phosphorus doped polysilicon films by plasma immersion ion implantation (PIII): Controlling and simplifying passivated contacts integration

Author(s): Antoine Veau, Thibaut Desrues, Audrey Morisset, Frank Torregrosa, Laurent Roux, Anne Kaminski-Cachopo, Quentin Rafhay, Sébastien Dubois
Published in: 15th International Conference on Concentrator Photovoltaic Systems (CPV-15), 2019, Page(s) 040021
DOI: 10.1063/1.5123848

TCO contacts on poly-Si layers: High and low temperature approaches to maintain passivation and contact properties

Author(s): Elise Bruhat, Thibaut Desrues, Danièle Blanc-Pélissier, Benoît Martel, Raphaël Cabal, Sébastien Dubois
Published in: 15th International Conference on Concentrator Photovoltaic Systems (CPV-15), 2019, Page(s) 040001
DOI: 10.1063/1.5123828

Advances with resist-free copper plating approaches for the metallization of silicon heterojunction solar cells

Author(s): Thibaud Hatt, Jonas Bartsch, Yannick Franzl, Sven Kluska, Markus Glatthaar
Published in: INTERNATIONAL SYMPOSIUM ON GREEN AND SUSTAINABLE TECHNOLOGY (ISGST2019), 2019, Page(s) 020010
DOI: 10.1063/1.5125875

Charge carrier transport mechanisms of passivating contacts studied by temperature-dependent J-V measurements

Author(s): Frank Feldmann, Gizem Nogay, Philipp Löper, David L. Young, Benjamin G. Lee, Paul Stradins, Martin Hermle, Stefan W. Glunz
Published in: Solar Energy Materials and Solar Cells, Issue 178, 2018, Page(s) 15-19, ISSN 0927-0248
DOI: 10.1016/j.solmat.2018.01.008

Recombination Analysis of Phosphorus-Doped Nanostructured Silicon Oxide Passivating Electron Contacts for Silicon Solar Cells

Author(s): Josua Stuckelberger, Gizem Nogay, Philippe Wyss, Andrea Ingenito, Christophe Allebe, Jorg Horzel, Brett A. Kamino, Matthieu Despeisse, Franz-Josef Haug, Philipp Loper, Christophe Ballif
Published in: IEEE Journal of Photovoltaics, Issue 8/2, 2018, Page(s) 389-396, ISSN 2156-3381
DOI: 10.1109/JPHOTOV.2017.2779871

Toward Annealing-Stable Molybdenum-Oxide-Based Hole-Selective Contacts For Silicon Photovoltaics

Author(s): Stephanie Essig, Julie Dréon, Esteban Rucavado, Mathias Mews, Takashi Koida, Mathieu Boccard, Jérémie Werner, Jonas Geissbühler, Philipp Löper, Monica Morales-Masis, Lars Korte, Stefaan De Wolf, Christophe Ballif
Published in: Solar RRL, Issue 2/4, 2018, Page(s) 1700227, ISSN 2367-198X
DOI: 10.1002/solr.201700227

Analysis of Silicon Solar Cells With Poly-Si/SiOx Carrier-Selective Base and Emitter Contacts

Author(s): Massimo Nicolai, Mauro Zanuccoli, Frank Feldmann, Martin Hermle, Claudio Fiegna
Published in: IEEE Journal of Photovoltaics, Issue 8/1, 2018, Page(s) 103-109, ISSN 2156-3381
DOI: 10.1109/JPHOTOV.2017.2775142

TCO contacts for high efficiency c-Si solar cells: Influence of different annealing steps on the Si substrates and TCO layers properties

Author(s): Elise Bruhat, Thibaut Desrues, Bernadette Grange, Helène Lignier, Danièle Blanc-Pélissier, Sébastien Dubois
Published in: Energy Procedia, Issue 124, 2017, Page(s) 829-833, ISSN 1876-6102
DOI: 10.1016/j.egypro.2017.09.354

Selectivity issues of MoO x based hole contacts

Author(s): Lisa Neusel, Martin Bivour, Martin Hermle
Published in: Energy Procedia, Issue 124, 2017, Page(s) 425-434, ISSN 1876-6102
DOI: 10.1016/j.egypro.2017.09.268

Investigation of atomic-layer-deposited TiO x as selective electron and hole contacts to crystalline silicon

Author(s): Takuya Matsui, Martin Bivour, Paul Ndione, Paul Hettich, Martin Hermle
Published in: Energy Procedia, Issue 124, 2017, Page(s) 628-634, ISSN 1876-6102
DOI: 10.1016/j.egypro.2017.09.093

Numerical Simulation of Silicon Heterojunction Solar Cells Featuring Metal Oxides as Carrier-Selective Contacts

Author(s): Christoph Messmer, Martin Bivour, Jonas Schon, Stefan W. Glunz, Martin Hermle
Published in: IEEE Journal of Photovoltaics, Issue 8/2, 2018, Page(s) 456-464, ISSN 2156-3381
DOI: 10.1109/JPHOTOV.2018.2793762

A Study on the Charge Carrier Transport of Passivating Contacts

Author(s): Frank Feldmann, Gizem Nogay, Jana-Isabelle Polzin, Bernd Steinhauser, Armin Richter, Andreas Fell, Christian Schmiga, Martin Hermle, Stefan W. Glunz
Published in: IEEE Journal of Photovoltaics, Issue 8/6, 2018, Page(s) 1503-1509, ISSN 2156-3381
DOI: 10.1109/JPHOTOV.2018.2870735

Requirements for efficient hole extraction in transition metal oxide-based silicon heterojunction solar cells

Author(s): Christoph Messmer, Martin Bivour, Jonas Schön, Martin Hermle
Published in: Journal of Applied Physics, Issue 124/8, 2018, Page(s) 085702, ISSN 0021-8979
DOI: 10.1063/1.5045250

Temperature-dependent contact resistance of carrier selective Poly-Si on oxide junctions

Author(s): N. Folchert, M. Rienäcker, A.A. Yeo, B. Min, R. Peibst, R. Brendel
Published in: Solar Energy Materials and Solar Cells, Issue 185, 2018, Page(s) 425-430, ISSN 0927-0248
DOI: 10.1016/j.solmat.2018.05.046

High Temperature Annealing of ZnO:Al on Passivating POLO Junctions: Impact on Transparency, Conductivity, Junction Passivation, and Interface Stability

Author(s): Tobias F. Wietler, Byungsul Min, Sina Reiter, Yevgeniya Larionova, Rolf Reineke-Koch, Frank Heinemeyer, Rolf Brendel, Armin Feldhoff, Jan Krugener, Dominic Tetzlaff, Robby Peibst
Published in: IEEE Journal of Photovoltaics, Issue 9/1, 2019, Page(s) 89-96, ISSN 2156-3381
DOI: 10.1109/jphotov.2018.2878337

Phosphorous-Doped Silicon Carbide as Front-Side Full-Area Passivating Contact for Double-Side Contacted c-Si Solar Cells

Author(s): Andrea Ingenito, Gizem Nogay, Josua Stuckelberger, Philippe Wyss, Luca Gnocchi, Christophe Allebe, Jorg Horzel, Matthieu Despeisse, Franz-Josef Haug, Philipp Loper, Christophe Ballif
Published in: IEEE Journal of Photovoltaics, Issue 9/2, 2019, Page(s) 346-354, ISSN 2156-3381
DOI: 10.1109/jphotov.2018.2886234

25.1%-Efficient Monolithic Perovskite/Silicon Tandem Solar Cell Based on a p -type Monocrystalline Textured Silicon Wafer and High-Temperature Passivating Contacts

Author(s): G. Nogay, F. Sahli, J. Werner, R. Monnard, M Boccard, M. Despeisse, F-J. Haug, Q. Jeangros, A. Ingenito, C. Ballif
Published in: ACS Energy Letters, Issue 4/4, 2019, Page(s) 844-845, ISSN 2380-8195
DOI: 10.1021/acsenergylett.9b00377

Contributions to the Contact Resistivity in Fired Tunnel-Oxide Passivating Contacts for Crystalline Silicon Solar Cells

Author(s): Franz-Josef Haug, Andrea Ingenito, Frank Meyer, Sofia Libraro, Noa Bolis, Juan Jose Diaz Leon, Christophe Allebe, Christophe Ballif
Published in: IEEE Journal of Photovoltaics, 2019, Page(s) 1-6, ISSN 2156-3381
DOI: 10.1109/jphotov.2019.2939880

Implementing transparent conducting oxides by DC sputtering on ultrathin SiOx / poly-Si passivating contacts

Author(s): Leonard Tutsch, Frank Feldmann, Jana Polzin, Christoph Luderer, Martin Bivour, Anamaria Moldovan, Jochen Rentsch, Martin Hermle
Published in: Solar Energy Materials and Solar Cells, Issue 200, 2019, Page(s) 109960, ISSN 0927-0248
DOI: 10.1016/j.solmat.2019.109960

Copper Plating Process for Bifacial Heterojunction Solar Cells

DOI: 10.4229/eupvsec20172017-2av.3.22

Reliable Copper Plating Process for Bifiacial Heterojunction Cells

Author(s): Agata Lachowicz, Jonas Geissbühler, Antonin Faes, Jonathan Champliaud, Joost Hermans, Jean-Francois Lerat, Pierre-Jean Ribeyron, Charles Roux, Guillaume Wahli, Pierre Pape, Benjamin Strahm, Jörg Horzel, Christophe Ballif and Matthieu Despeisse
Published in: Metallization Workshop, Issue Mon, S4, 2017

Influence of ITO Sputter Deposition on Phosphorus-Doped Nanostructured Silicon Oxide Passivating Electron Contacts4

Author(s): J. Stuckelberger, P. Wyss, G. Nogay, J. Horze, C. Allebé, M. Despeisse, A. Ingenito, F.-J. Haug, P. Löper and C. Ballif
Published in: SiliconPV 2018, Issue Wed, PS3, 3-B-18, 2018

Assessing the Life Cycle Impacts of a Novel Renewable Energy Technology

Author(s): Andy Whiting, Bryan Hartlin
Published in: 2018 MRS Spring Meeting, Issue 4.4.2018, Wed, 8:30 AM, EN16.03.02, 2018

High Efficiency Matters – The DISC Project

Author(s): M Topič (presenter), M Bokalič (poster)
Published in: ETIP PV - Quality and sustainability of PV systems conference, 2018

A Simple Process Flow For Silicon Solar Cells With Co-Annealing Of Electron And Hole Selective Passivating Contacts

Author(s): Gizem Nogay, Andrea Ingenito, Esteban Rucavado, Josua Stückelberger, Quentin Jeangros, Philippe Wyss, Monica Morales-Masis, Franz-Josef Haug, Philipp Löper, Christophe Ballif
Published in: WCPEC-7, Issue Oral-Area 4, Tue 1:30; 461, 2018

Status of the EU H2020 DISC project: European collaboration in research and development of high efficient Double side contacted cells with Innovative carrier-Selective Contacts

Optimizing TCO Layers for Novel Bifacial Crystalline Silicon Homojunction Solar Cells Integrating Passivated Contacts

DOI: 10.4229/35theupvsec20182018-2av.2.38

SiCx- and SiOx-based passivating contacts for high-efficiency silicon solar cells

Transparent Passivating Contacts for Front Side Application

Processing Routes and Costs for Copper Plating on Bifacial Heterojunction Cells

Engineering of Thin Film Silicon Materials for High Efficiency Crystalline Silicon Solar Cells

Transparent conductive oxide screening on high temperature passivating contact solar cells for improved passivation and cell efficiency

High mobility IWO for improved current in heterojunction technology solar cells

New Characterization Method for Determination of Surface Recombination Rate of Carrier Selective Junctions

Author(s): Andrej Čampa, Franc Smole, Marko Topič
Published in: Silicon PV 2019, Issue Mon, April 08; 13:00-14:00 – Poster Session 1: S1-03, 2019

Integration Avenues in Solar Cells Implementing Passivating Contacts

Author(s): Juan J Diaz Leon, Christophe Allebé, Joerg Horzel, Gizem Nogay, Antoine Descoeudres, Gabriel Christmann, Laura Ding, Nicolas Badel, Andrea Ingenito, Matthieu Despeisse, Sylvain Nicolay, Christophe Ballif
Published in: Silicon PV 2019, Issue Mon, April 8; 16:00-17:00 – Poster Session 2: S2-09, 2019

TCOs for Poly-Si Based Passivating Contacts

Author(s): Leonard Tutsch, Frank Feldmann, Bart Macco, Jana Polzin, Martin Bivour, Erwin Kessel, Martin Hermle
Published in: Silicon PV 2019, Issue Wed April 10; 14:30 – Session 10, 2019

A Route to High Efficiency PV – The DISC Project

Author(s): B. Min, T. Wietler, S. Bordihn, R. Peibst, T. Desrues, P. Carroy, J. Jourdan, M. Hermle, F. Feldmann, J. Bartsch, C. Allebe, L. Ding, A. Ingenito, F. Haug, E. Schneiderlöchner, V. Linß, R. Köhler, A. Čampa, M. Bokalič, M. Topič, M. Zwegers, A. Hovestad, B. Hartlin, C. Poulopoulos, S. Galley, A. Richter, B. Bénédicte, A. Zoltan, J. Penaud, N. Harder, J. Chupin
Published in: ETIP PV - Readying for the TW Era, Issue May 28 2019, 2019

Contacting n+ Poly-Si Junctions with Fired AZO Layers: A Promising Approach for High Temperature Passivated Contact Solar Cells

Author(s): Elise Bruhat, Thibaut Desrues, Danièle Blanc-Pélissier, Benoît Martel, Raphaël Cabal, Sébastien Dubois
Published in: IEEE PVSC 2019, Issue Thu, Jun 20; 10:30AM, Area 4, 2019

PECVD-based layers for improved high temperature industrial solar cell processes

Author(s): C. Allebé, J.J. Diaz Leon, A. Ingenito, A. Descoeudres, G. Nogay, P. Wyss, Franz-Josef Haug, M. Despeisse, S. Nicolay, C. Ballif
Published in: IEEE PVSC 2019, Issue Thu, Jun 20; 8:30AM, Area 4, 2019

Fired Hydrogenated AZO Layers: A New Passivation Approach for High Temperature Passivated Contact Solar Cells

Polysilicon Layers Doped by Plasma Immersion Ion Implantation (PIII): New Paths for Industrial Processing of Passivated Contacts Solar Cells

Integration Avenues in Solar Cells Implementing Passivating Contacts

Degradation and Regeneration of n+-Poly-Si on Oxide Surface Passivation under Illumination and Dark Annealing on p-Type Cz-Si

Modelling of Passivation and Conductivity of n-Type Poly-Si Layers Adapting Machine Learning

Development of Phosphorus Thin Doped Layers by Plasma Immersion for Homo- Hetero Junction Solar Cells Application

Environmental and social impact assessment of high-efficient double side contacted cells with innovative carrier selective contacts

DISC - Introductory talk

Author(s): Byungsul Min
Published in: Wokrshop: High Efficiency Approaches in Crystalline Silicon PV, 2019

Advanced TCO Processes for Ultra-thin TOPCon Layers

Author(s): Frank Feldmann
Published in: Wokrshop: High Efficiency Approaches in Crystalline Silicon PV, 2019

DISC Expolitation Results

Author(s): Rikus Janken
Published in: Wokrshop: High Efficiency Approaches in Crystalline Silicon PV, 2019

Deliverables

Publications

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