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Structural and electrical investigation of 2D materials and their heterostructures for groundbreaking nanoelectronic devices and applications

Project description

2D materials could keep Moore’s law going

Two-dimensional (2D) materials have extraordinary properties that could allow the development of flexible, low-power electronics devices that exceed Moore’s law, which observes that the processing power roughly doubles every two years, while the cost is halved. Although there are thousands of candidate materials that could replace silicon in conventional CMOS devices, further research is needed to overcome notable challenges. Funded by the Marie Skłodowska-Curie Actions programme, the GO2NANO project plans to conduct research with a focus on 2D material growth, material interface characterisation and contact fabrication. Project research should enhance understanding of the chemical and electronic nature and role of defects and impurities, facilitating the development and operation of unprecedented 2D-based transistors suitable for integration with CMOS technology.

Objective

Many things that are now part of our daily lives were inconceivable just few years ago. This is mostly due to great and rapid developments in information and communication technologies (ICT) and in particular micro- and nanoelectronics. This has been possible thanks to the Silicon semiconductor technology that has done marvels for the advancement of our Society, who has benefited tremendously from its versatile use and amazing capabilities. However, the miniaturization of circuits seems to have reached a possible halt, since transistors can only be shrunk down to a certain size and not further beyond. To ensure the continued progress of electronic technology and fulfill the future demands of Society, a rapidly expanding research effort is focused on finding transformative technologies by employing alternative materials for the next-generation of nanoelectronic devices. Particularly, the fascinating two-dimensional materials have attracted a world-wide attention in the recent years due to its extraordinary properties that suit for future flexible and low-power consumption electronics devices. Although there are thousands of candidate materials in portfolio, their use in integrated 2D-Si CMOS applications and for future devices beyond CMOS technology require further research and engineering efforts to overcome notable challenges. Thus, GO2NANO is proposed to undertake ground-breaking research that will contribute to the advance in the maturation 2D nanodevices by targeting the following challenges: 2D materials growth, materials interface characterization and contact fabrication. This research will contribute to the understanding of the chemical and electronic nature and role of defects and impurities, facilitating a rational development and control of the operation mode of unprecedented 2D-based transistors suitable for their co-integration with CMOS technology.

Fields of science (EuroSciVoc)

Keywords

Programme(s)

Topic(s)

Funding Scheme

MSCA-IF - Marie Skłodowska-Curie Individual Fellowships (IF)

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Call for proposal

(opens in new window) H2020-MSCA-IF-2020

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Coordinator

UNIVERSIDAD DE GRANADA
Net EU contribution
€ 165 495,36
Address
CUESTA DEL HOSPICIO SN
18071 Granada
Spain
Region
Sur Andalucía Granada
Activity type
Higher or Secondary Education Establishments
Links
Total cost
€ 165 495,36

Partners (1)