Skip to main content
Go to the home page of the European Commission (opens in new window)
English en
CORDIS - EU research results
CORDIS

Van der Waals Architectures for Next-Generation AI Electronics

Project description

Flawless 2D materials to boost energy efficiency in AI

Training and running AI requires massive, simultaneous calculations that consume enormous power. This will push silicon-based data centres towards an electricity crisis. Indium selenide – an ultra-thin 2D semiconductor – offers an energy-saving alternative because electrons move through it with minimal resistance. However, growing defect-free films at a large scale remains a critical barrier. Funded by the Marie Skłodowska-Curie Actions programme, the VANDAI project will grow high-quality indium selenide using specialised buffer layers on silicon to eliminate crystal mismatches. The workflow includes synthesising these ultra-thin buffers, analysing material interfaces to prevent atomic defects, optimising chemical vapour deposition, and using advanced imaging and spectroscopy techniques to refine material growth. Ultimately, researchers will build and test a prototype field-effect transistor to validate its electronic performance.

Objective

VANDAI aims to deliver a breakthrough in sustainable AI hardware by developing wafer-scale, device-quality indium selenide (InSe) transistors as an energy-efficient alternative to silicon. With data centers projected to consume up to 30% of national electricity by 2034, largely driven by AI workloads, replacing today’s energy-intensive silicon devices is urgent. InSe, a 2D semiconductor with a direct, thickness-tunable bandgap and high carrier mobility, offers exceptional potential for next-generation transistors. However, scalable synthesis of defect-controlled InSe films remains a critical barrier.

This project will overcome that barrier by using van der Waals buffer layers—wafer-scale h-BN or MoS2 films grown on silicon—to minimize lattice mismatch, suppress defect nucleation, and enable coherent InSe growth. The workflow integrates (i) wafer-scale buffer synthesis with <5% thickness variation, (ii) buffer/InSe interface analysis to quantify coherency and defect initiation, (iii) InSe growth by optimized MOCVD at device-compatible conditions, and (iv) feedback from advanced TEM, AFM, Raman, and XPS to refine growth. A prototype lateral field-effect transistor (FET) will then be fabricated and electrically validated, targeting benchmark values for mobility, on/off ratio, and switching stability.

The fellowship combines advanced synthesis with state-of-the-art characterization and leverages expertise at Queen Mary University of London and the University of Cambridge. It will generate open datasets, high-impact publications, and industry-relevant patents, while strengthening the researcher’s skills in 2D materials and device fabrication. VANDAI directly supports the European Green Deal by reducing the carbon footprint of AI computing and positioning the UK and EU as leaders in 2D semiconductor manufacturing. The outcomes will pave the way for low-power electronics, new industrial opportunities, and climate-resilient digital infrastructure.

Fields of science (EuroSciVoc)

Keywords

Programme(s)

Topic(s)

Funding Scheme

HORIZON-TMA-MSCA-PF-EF - HORIZON TMA MSCA Postdoctoral Fellowships - European Fellowships

See all projects funded under this funding scheme

Call for proposal

(opens in new window) HORIZON-MSCA-2025-PF

See all projects funded under this call

Coordinator

QUEEN MARY UNIVERSITY OF LONDON
Net EU contribution
€ 260 347,92
Address
327 MILE END ROAD
E1 4NS LONDON
United Kingdom
Activity type
Higher or Secondary Education Establishments
Links
Total cost
No data

Partners (1)