Objective The objective of the present project is to fabricate and to study GaN-based heterostructure laser diodes grown by homoepitaxy on GaN substrates and emitting in the blue to near UV region. The growth of single crystal GaN substrates and the development of the most appropriate epitaxial growth technique and identification of the most suitable heterostructure represents the hard core in this study, which we expect will pave the way to a new generation of GaN based optoelectronic devices.To reach the final goal of producing GaN based lasers, MOVPE and GSMBE growth techniques will be used in this programme with specific goals. The most appropriate epitaxial technique will be kept for the laser structure fabrication.Solid state lasers operating in the blue and near U.V. spectral range will be key components in many important application areas. These areas include, but are not limited to, high-density optical storage systems such as CD-ROMs and compact disks, high resolution laser printers, digital imaging, visible holography, optical memories, optical computers and medical applications. The frequency doubling of existing high-power near infrared lasers, which is the competing technology, is necessarily bulkier, less efficient and more expensive than direct emission of light from a laser diode at the desired wavelength. Red, green and blue constitute the set of primary colours from which any desired colour can be obtained by colour-mixing as in the RGB phosphor matrix of a colour-TV screen. Fields of science engineering and technologymaterials engineeringcolorsnatural sciencesphysical sciencesopticslaser physics Programme(s) FP4-ESPRIT 4 - Specific research and technological development programme in the field of information technologies, 1994-1998 Topic(s) 4.2 - Reactiveness to Industrial Needs Call for proposal Data not available Funding Scheme CSC - Cost-sharing contracts Coordinator Centre de Recherche Sur L'hetero-Epitaxie et Ses Applications (Centre National de la Recherche Scientifique) EU contribution No data Address Rue Bernard Gregory 1 06560 Sophia Antipolis France See on map Total cost No data Participants (5) Sort alphabetically Sort by EU Contribution Expand all Collapse all Aixtron Semiconductor Tech. Gmbh Germany EU contribution No data Address Kackerstrasse 15-17 52070 Aachen See on map Total cost No data Institute de Micro-Optoelectronics Ecole Polytechnique Federale de Lausanne Switzerland EU contribution No data Address 1015 Lausanne See on map Total cost No data UNIVERSIDAD POLITECNICA DE MADRID Spain EU contribution No data Address Ramiro de Maeztu, 7 28040 MADRID See on map Total cost No data UNIVERSITAET - GESAMTHOCHSCHULE PADERBORN Germany EU contribution No data Address WARBURGER STRASSE 100 33098 PADERBORN See on map Total cost No data University of Nottingham United Kingdom EU contribution No data Address University Park NG7 2RD Nottingham See on map Links Website Opens in new window Total cost No data
