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Semiconductor Nanospintronics

Objective

NANOSPIN aims at the development of novel multifunctional spintronic nanoscale devices whose mode of operation is designed to take optimum advantage of the specific magneto electric properties of ferromagnetic semiconductors. The devices combine non-volatility, low current consumption, high switching speed and excellent scalability.

The project addresses a number of interlinked novel device concepts for the magnetic writing of information, including current induced switching and current induced domain wall motion, combined with novel readout concepts based on tunnelling anisotropic magneto resistance and double barrier structures. In addition the performance of the devices will be investigated in the frequency range beyond 1GHz. Since the project is strongly device oriented, we will use the well established and well understood ferromagnetic semiconductor (Ga,Mn) as a vehicle material.

This will enable us to focus on device action, rather than on materials issues. While this implies that the devices studied will necessarily operate at low temperatures only, the concepts developed by us should directly apply to any p-type ferromagnetic semiconductor. In this manner, the project complements ongoing materials research on room temperature ferromagnetic semiconductors.

The work is carried out by leading European groups in the fields of spin transport in semiconductors, nanolithography, ferromagnetic semiconductor growth and characterization. Several industrial and semi-industrial partners will monitor the potential of the developed devices for industrial applicability and commercialisation for post CMOS applications.

Coordinator

BAYERISCHE JULIUS-MAXIMILIANS UNIVERSITAET WUERZBURG
Address
Sanderring 2
97070 Wuerzburg
Germany

Participants (8)

CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
France
Address
3, Rue Michel-ange
75794 Paris Cedex 16
FYZIKALNI USTAV AV CR
Czechia
Address
Na Slovance 2
18221 Praha 8
HITACHI EUROPE LIMITED
United Kingdom
Address
Lower Cookham Road
SL6 8YA Maidenhead
INSTYTUT FIZYKI PAN
Poland
Address
Al. Lotnikow 32/46
02-668 Warszawa
INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW
Belgium
Address
Kapeldreef 75
3001 Leuven
THALES
France
Address
45 Rue De Villiers
92526 Neuilly Sur Seine
THE UNIVERSITY OF NOTTINGHAM
United Kingdom
Address
University Park
NG7 2RD Nottingham
UNIVERSITE PARIS-SUD
France
Address
15, Rue Georges Clemenceau
91405 Orsay Cedex