Obiettivo
NANOSPIN aims at the development of novel multifunctional spintronic nanoscale devices whose mode of operation is designed to take optimum advantage of the specific magneto electric properties of ferromagnetic semiconductors. The devices combine non-volatility, low current consumption, high switching speed and excellent scalability.
The project addresses a number of interlinked novel device concepts for the magnetic writing of information, including current induced switching and current induced domain wall motion, combined with novel readout concepts based on tunnelling anisotropic magneto resistance and double barrier structures. In addition the performance of the devices will be investigated in the frequency range beyond 1GHz. Since the project is strongly device oriented, we will use the well established and well understood ferromagnetic semiconductor (Ga,Mn) as a vehicle material.
This will enable us to focus on device action, rather than on materials issues. While this implies that the devices studied will necessarily operate at low temperatures only, the concepts developed by us should directly apply to any p-type ferromagnetic semiconductor. In this manner, the project complements ongoing materials research on room temperature ferromagnetic semiconductors.
The work is carried out by leading European groups in the fields of spin transport in semiconductors, nanolithography, ferromagnetic semiconductor growth and characterization. Several industrial and semi-industrial partners will monitor the potential of the developed devices for industrial applicability and commercialisation for post CMOS applications.
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Data not availableMeccanismo di finanziamento
STREP - Specific Targeted Research ProjectCoordinatore
97070 WUERZBURG
Germania