Project description
Stacked 2D materials offer the potential for low-power electronics
Continuous progress in semiconductor technology has led to the development of faster and smaller transistors. The metal-oxide semiconductor field-effect transistor (MOSFET) is the most widely used FET. However, a major limitation is its low power efficiency, which is attributed to its large operating voltage and the inability to limit the off-state leakage current. The tunnel FET, an experimental type of transistor, can overcome this limitation by leveraging quantum mechanical tunnelling. The EU-funded 2D-LOTTO project will address key challenges that limit the realisation of high-performance tunnel FETs. The integration of low-resistance p- and n-type contacts, negative capacitance materials and 2D vertical semiconductor heterostructures with ideal interfaces should provide ultra-low power, CMOS-compatible tunnel FETs that could transform IoT, Big Data and computing.
Objective
Modern electronics consume a huge amount of world’s energy – currently ~ 5% and rising to > 20% in 2030. Field effect transistors (FETs) account for a large fraction of the energy consumed in electronics due to high OFF state (leakage) currents and large operating voltage (~ 0.8V). Tunnel FETs (TFETs) based on two-dimensional semiconductors (2D SCs) provide unique and game-changing solutions for both of these problems and can be engineered using industry compatible complementary metal oxide semiconductor (CMOS) processes. However, despite the intense effort over the past decade, serious challenges remain in realizing high performance TFETs. The challenges, related to achieving high quality p- and n-type contacts, practical ON state currents and scalability, arise from the lack of precise control of material interfaces. Therefore, completely new approaches in materials and process engineering are needed to reap the benefits of 2D SCs for TFETs. 2D-LOTTO provides these frontier approaches to TFET challenges by designing and engineering vertical heterostructures of 2D SCs with novel ultra-clean, low resistance p- and n-type near ideal van der Waals (vdW) contacts that allow operation at ~ 100 mV. Internal electric field amplification to boost ON state currents to practical levels will be achieved for the first time by using negative capacitance (NC) gate dielectrics. The integration of vdW contacts, NC gates and 2D SC heterostructures with ideal interfaces will provide ultra-low power, CMOS compatible TFETs that have the potential to transform the technology landscape in IoT, Big Data and computing. Initially, automated mechanical exfoliation of 2D SC vertical heterostructures will be used to design and test TFETs. Then, CMOS compatible metal organic chemical vapor deposition (MOCVD) will be used to realize wafer scale devices. The viability of proposed approach is confirmed by proof of concept demonstrations reported by the PI in engineering 2D SCs for FETs.
Fields of science (EuroSciVoc)
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CORDIS classifies projects with EuroSciVoc, a multilingual taxonomy of fields of science, through a semi-automatic process based on NLP techniques. See: The European Science Vocabulary.
This project's classification has been validated by the project's team.
Keywords
Project’s keywords as indicated by the project coordinator. Not to be confused with the EuroSciVoc taxonomy (Fields of science)
Project’s keywords as indicated by the project coordinator. Not to be confused with the EuroSciVoc taxonomy (Fields of science)
Programme(s)
Multi-annual funding programmes that define the EU’s priorities for research and innovation.
Multi-annual funding programmes that define the EU’s priorities for research and innovation.
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H2020-EU.1.1. - EXCELLENT SCIENCE - European Research Council (ERC)
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Calls for proposals are divided into topics. A topic defines a specific subject or area for which applicants can submit proposals. The description of a topic comprises its specific scope and the expected impact of the funded project.
Funding Scheme
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Funding scheme (or “Type of Action”) inside a programme with common features. It specifies: the scope of what is funded; the reimbursement rate; specific evaluation criteria to qualify for funding; and the use of simplified forms of costs like lump sums.
ERC-ADG - Advanced Grant
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Call for proposal
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Procedure for inviting applicants to submit project proposals, with the aim of receiving EU funding.
(opens in new window) ERC-2020-ADG
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CB2 1TN CAMBRIDGE
United Kingdom
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