Advances foR nExt generaTion tHz Applications

Project Information

ARETHA

Grant agreement ID: 101024253

DOI

10.3030/101024253

Project closed

EC signature date 1 April 2021

Start date 1 May 2021

End date 30 April 2023

Funded under

• EXCELLENT SCIENCE - Marie Skłodowska-Curie Actions

Total cost

€ 174 167,04

EU contribution

€ 174 167,04

Coordinated by

INFINEON TECHNOLOGIES AUSTRIA AG
Austria

Periodic Reporting for period 1 - ARETHA (Advances foR nExt generaTion tHz Applications)

Reporting period: 2021-05-01 to 2023-04-30

Summary of the context and overall objectives of the project

The ever-growing need for smaller, more robust, and cost-efficient power devices has led to the constant optimization of the power MOSFETs. Power semiconductor devices, or simply power devices, are usually optimized for their intended purpose. In this project the focus is on powerMOSFETs for telecom, datacom and consumer electronics applications. All of them are dedicated to markets that evolve massively with the ever-growing digitalization. For telecom and datacom this also includes the extensive need for data transfer (even more important after the effects of the Covid-19 pandemic with the need of digital communication) and the electronics applications that are needed to make the digital world accessible. Therefore, powerMOSFETs and the needed technologies to improve them is the focus of ARETHA.
In a multidisciplinary way, Dr. Maria Mitronika applied novel ideas and the latest achievements in material science to study and further provide highest efficiency power MOSFETs for power management of telecom, datacom and consumer electronics.
The work evolved around two main objectives with the goal to enhance Si Power MOSFET capabilities and performance. First Dr. Mitronika evaluated the possibility to create a new parametrized library for Si Power MOSFETs, as a kind of toolbox for module design to be able to provide more sophisticated products. In the second part, Dr. Mitronika investigated the feasibility to implement a novel approach for developing thin films used as Gate Oxide in trench MOSFET technologies.
With these two focus topics, Dr. Mitronika worked on a holistic approach for the improvement of powerMOSFETS, using both, the materials perspective she brought in from her expertise and the semiconductor technology she could make use of at Infineon.

Work performed from the beginning of the project to the end of the period covered by the report and main results achieved so far

The work was divided into six work packages – 4 of them dedicated to technical topics accompanied by Dissemination, Exploitation and Communication and a work package to provide project management, innovation and risk management. Therefore we present the technical results in the WPs whilst exploitation and dissemination is shown in WP5.
WP1: Identify the key factors enabling the implementation of the highest efficiency and power density electronic systems
Our ultimate intention was to create a parametrized library (toolbox - design modules to create more sophisticated products) based on which the application engineer or technical market expert can propose targeted solutions to the telecom, datacom, and consumer-electronics customer.
The work resulted in:
• Deliverable D1.1: Design requirements, technology specifications, and proposed modifications

WP2: Design novel Power MOSFET layout concepts that address high efficiency and power density electronic systems
The project team was lead by the researcher. Several layout versions were proposed and the trade-off between RDS(on) and estimated SOA was calculated. Based on these results shared reticles were requested and taped out to verifythe calculations.
The work resulted in:
• Deliverable D2.1: Technology layout focusing on low RDS(on) and wide SOA

WP3: Investigate novel Oxidation approach as a gate oxide and elaborate it in the Trench Power MOSFET Technologies
A novel oxidation approach was investigated as alternative for the GOX formation in trench powerMOSFETs, with the goal to reach better GOX uniformity and tighter Vth distribution.
The work resulted in:
• Deliverable D3.1: Advanced Thin-Film technologies in GOX

WP4: Evaluate the proposed enhancements and modifications to Power MOSFET designs
The evaluation methodology of the produced enhancements was explained. The produced materials were evaluated using approaches like: inline metrology for performance and characteristics assessment, assembly tests for SOA and RDS(on) and extensive Wafer Level Reliability techniques were applied.
The work resulted in:
• Deliverable D4.1: Evaluation of the complete technology platform)

WP5: Dissemination, Exploitation and Communication
Despite the Covid-19 pandemic restrictions, we could spread the achieved results through various channels thanks to the great commitment of the Researcher.
the results of all Workpackages and the idea of Marie S. Curie Projects were shared.
The work resulted in:
• 2 Innovation Awards Participation (Infineon internal Communication)
• 1 Invention Disclosure
• 2 Conference contributions
• 3 Oral presentations

WP6: Project Management, Innovation & Risk
Based on the proven Infineon project management processes, this work was split into two levels – Coordination & Administration and Technical Project Management.
1) Coordination & Administration
Deliverables foreseen in the GA were prepared and submitted
2) Technical Management
Full integration of Dr. Mitronika into the team of Si Power MOSFETs for Low Voltage and Medium Voltage applications for Power Systems in Infineon Villach.
Successful Monitoring and Assessment during the project lifetime

The work resulted in:
• Deliverable D6.1: Setup of Training and Career Plan
• Deliverable D6.2: Training and Career Development Plan

Progress beyond the state of the art and expected potential impact (including the socio-economic impact and the wider societal implications of the project so far)

Progress beyond the state of the art: results and impact
In a multidisciplinary approach, Dr. Maria Mitronika applied novel ideas and the latest achievements in material science to study and further provide highest efficiency Si power MOSFETs for power management of telecom, datacom and consumer electronics.
Progress beyond the state of the art:
In detail, it was shown that for the same GOX thickness, this novel material (eg. powerMOSFET devices) has a slightly higher GOX Vbd in comparison to the std thermal one. Nevertheless, a strong presence of extrinsic-behaving chips was observed. This, of course, could be linked to the rather novel setup of this approach in comparison to the productive thermally grown one. Moreover, using Transmission Electron Microscopy (TEM), it was shown that the Si consumption is improved compared to the standard thermally grown oxide.
• Invention Disclosure No. 2022E00522 (Submitted: 14.04.2022)

Impact:
The ever-growing need for smaller, more robust, and cost-efficient power devices calls for constant optimization of the power MOSFETs. Power semiconductor devices, or simply power devices, are usually optimized for their intended purpose. In this project the focus is on Si power MOSFETs for telecom, datacom and consumer electronics applications. All of them are dedicated to markets that evolve massively with the ever-growing digitalization. For telecom and datacom this also includes the extensive need for data transfer (even more important after the effects of the Covid-19 pandemic with the need of digital communication) and the electronics applications that are needed to make the digital world accessible. Therefore, powerMOSFETs and the needed technologies to improve them provide solutions for the challenges of energy efficiency (less need of energy supports the transition to “green” energy production) and digitalization that needs to be accessible by everybody in our society.

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