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Fully RoHS Compliant Infrared Light Emitting Diodes Based on Novel Lead-free Quantum Dots

Project description

Infrared LEDs based on novel colloidal materials and nanoengineered devices

The technology of infrared light-emitting diodes (IR-LEDs) supports a large variety of applications, such as fibre-optic communication, biomedical imaging, security and night vision. While lead-containing colloidal semiconductor quantum dots (QDs) offer exceptional promises for IR-LED technology due to their low-cost production and unique optical properties, their progress is severely restricted because of the lead toxicity. The EU-funded INFLED project will identify and develop novel and efficient lead-free QDs. At the crossroad of chemistry, physics and engineering, the project will target the most efficient heavy metal-free IR-LED using a novel synthesis technique as well as rational nanoengineering at both material and device level.

Objective

Infrared light-emitting diodes (IR-LEDs) serve a broad range of applications including fiber-optic communications, night vision as well as clinical diagnosis and biomedical imaging. Within the family of nanomaterials, colloidal semiconductor quantum dots (QDs) offer exceptional promises for IR-LEDs due to their unique optical properties and low-cost solution-processability. So far, state-of-the-art QD IR-LEDs are based on lead-containing QDs, which has been severely restricted by the environmental directives e.g. EU’s “Restriction of Hazardous Substances” (RoHS). In fact, current challenges of IR-LED technology are to identify and develop novel and efficient lead-free QDs. INFLED aims at demonstrating the first RoHS-compliant and efficient QD IR-LED based on innovative and environmentally friendly material design and device engineering. The project targets the most efficient heavy metal-free infrared QD using a novel synthesis technique as well as rationally nanoengineering at material level. Furthermore, the resultant design at device level will lead to low trap state density, high solid-state quantum efficiency and thereby efficient LEDs. Hence, the key objectives of this proposal are: i) a novel QD synthesis method; ii) material design at nanocrystalline level; iii) LED device engineering at supra-nanocrystalline level. INFLED is at the crossroad of chemistry, physics and engineering, and therefore is expected to attract significant attention from different disciplines along with offering new insights toward next-generation infrared and quantum network technology.

Coordinator

FONDAZIONE ISTITUTO ITALIANO DI TECNOLOGIA
Net EU contribution
€ 171 473,28
Address
VIA MOREGO 30
16163 Genova
Italy

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Region
Nord-Ovest Liguria Genova
Activity type
Research Organisations
Links
Total cost
€ 171 473,28