Highly Energy-Efficient Resistive Switching in Defect- and Strain- Engineered Mott Insulators for Neuromorphic Computing Applications

Project Information

MottSwitch

Grant agreement ID: 101039986

DOI

10.3030/101039986

EC signature date 11 April 2022

Start date 1 September 2022

End date 31 August 2027

Funded under

• European Research Council (ERC)

Total cost

€ 1 500 000,00

EU contribution

€ 1 500 000,00

Coordinated by

TECHNION - ISRAEL INSTITUTE OF TECHNOLOGY
Israel

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Deliverables

Data Management Plan (1)

Data Management Plan

Drafting the Data Management Plan

Publications

Peer reviewed articles (3)

Laser-induced quenching of metastability at the Mott insulator to metal transition

Author(s): Theodor Luibrand, Lorenzo Fratino, Farnaz Tahouni-Bonab, Amihai Kronman, Yoav Kalcheim, Ivan K. Schuller, Marcelo Rozenberg, Reinhold Kleiner, Dieter Koelle, Stefan Guénon
Published in: Physical Review B, Issue 110, 2024, ISSN 2469-9950
Publisher: American Physical Society (APS)
DOI: 10.1103/PhysRevB.110.L081108

Domain nucleation across the metal-insulator transition of self-strained V2⁢O3 films

Author(s): Alexandre Pofelski, Sergio Valencia, Yoav Kalcheim, Pavel Salev, Alberto Rivera, Chubin Huang, Mohamad Assaad Mawass, Florian Kronast, Ivan K. Schuller, Yimei Zhu, Javier del Valle
Published in: Physical Review Materials, 2024, ISSN 2475-9953
Publisher: American Physical Society
DOI: 10.1103/PhysRevMaterials.8.035003

Positive and Negative Pressure Regimes in Anisotropically Strained V₂O₃ Films

Author(s): Eti Barazani, Dip Das, Chubin Huang, Abhishek Rakshit, Cecile Saguy, Pavel Salev, Javier del Valle, Maytal Caspary Toroker, Ivan K. Schuller, Yoav Kalcheim
Published in: Advanced Functional Materials, Issue 33, 2023, ISSN 1616-301X
Publisher: Wiley
DOI: 10.1002/adfm.202211801

Other (1)

Magnetic precursor to the structural phase transition in V2O3

Author(s): Chubin Huang, Abhishek Rakshit, Gianluca Janka, Zaher Salman, Andreas Suter, Thomas Prokscha, Benjamin A. Frandsen, Yoav Kalcheim
Published in: arxiv, 2024
Publisher: arxiv
DOI: 10.48550/arXiv.2410.23030