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High Speed Communication Links Based on Heterogeneous Chips

Project description

Building faster, more-efficient communications links

Optical links help connect the world. However, state-of-the-art optical-link technologies are struggling as people and businesses consume increasing amounts of information. Optical transceivers (which transmit and receive data) are particularly burdened as transmission rates intensify and data formatting techniques become more complex. The EU-funded COMb project has a plan: use a high-performing, cost-effective silicon nitride platform to integrate indium phosphide and lithium niobate — two key materials used extensively in telecommunications — and make ultra-high-speed transceivers. COMb will use many lines and the mode-lock technique so that lasers produce extremely fast pulses of light to transmit higher data rates and obtain higher symbol rates.


The constant hunger for data is straining optical links causing optical chip makers to struggle. Transceivers have to work at everincreasing symbol rates. On top they need to handle more complex data formats. New materials have to be sought after as current modulator technologies in e.g. silicon are reaching their limit. In the COMb project, we will leverage recently obtained results to make ultra-high-speed transceivers based on the multi-material integration of Indium Phosphide and Lithium Niobate on a silicon nitride platform. By exploiting mode-locked lasers and using a large number of lines higher data rates can be transmitted over the same channel. By heterogeneously integrating the source with a Lithium Niobate modulator very high symbol rates can be obtained.


Host institution

Net EU contribution
€ 150 000,00
9000 Gent

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Vlaams Gewest Prov. Oost-Vlaanderen Arr. Gent
Activity type
Higher or Secondary Education Establishments
Total cost
No data

Beneficiaries (1)