Periodic Reporting for period 1 - FOR2ENSICS (Future Oriented Renewable and Reliable Energy SIC Solutions)
Période du rapport: 2023-01-01 au 2024-04-30
Driven by the continued effort to combat the climate change and achieve carbon neutrality, the composition of the energy sources and consumers connected to the electrical grid is rapidly changing. An increasing amount of issues are being experienced by distribution system operators while trying to accommodate new systems like renewable energy sources or electric vehicles charging infrastructure. One of the possible solutions is to develop a DC distribution infrastructure, which is especially interesting as most of the new connections mentioned above are native DC sources and loads, respectively. This requires low cost, very efficient and compact DC/DC converters from LV (<1500V) up to MV (>10kV). However, currently no commercial solutions exist on the market. The aim of this project is to develop and demonstrate a commercial DC/DC converter prototype which can be introduced to the market within short timescale (<3 years) after completion of the project. To achieve such an ambitious target, the project team has decided to focus on the development of ultra- high voltage (UHV) SiC based switching devices which would allow for a remarkable simplification of the converter topology as well as a very compact design when coupled with high frequency operation. For this purpose, the project aims at the design, fabrication and testing of 15 kV SiC IGBTs modules. The choice of the device technology is based on previous studies, which point towards a break-even voltage between SiC MOSFET and SiC IGBT just above 10 kV. Highly relevant, both cost and environmental impact reduction of the fabrication processes will be targeted, using novel approaches for material growth and semiconductor processing. At the same time, another major
target of the project is to understand reliability issues affecting different converter components such as UHV switching devices, passive components, and medium frequency transformer associated with high switching frequency and high voltage environment.
target of the project is to understand reliability issues affecting different converter components such as UHV switching devices, passive components, and medium frequency transformer associated with high switching frequency and high voltage environment.
The overall objective of the proposal is to demonstrate disruptive Silicon Carbide (SiC) based devices with Ultra-High Voltage (UHV) capability adapted to the novel challenges of energy grid
distribution.
Here there is a summary of the objectives of the project and the grade of achievement in these first months.
Objective 1:
Description: Develop optimal SiC starting material with low defects density, high carrier lifetime and re-usable substrate adapted to 15kV bipolar devices fabrication based on an innovative substrate laser splitting technique.
Comments: Wafers fabricated and delivered however a delay in the laser splitting is foreseen of about 1 year (see text in WP2).
%Achievement: 25%
Objective 2:
Description: Develop optimal active area and innovative termination designs for maximum current/area capability.
Comments: Design and simulation of IGBT active area and termination design is done for the first round. Eperimental trials awaiting for further feedback for further design improvements.
% Achievement: 60%
Objective 3:
Description: Develop a processing technology based on reduced energy and water consumption, and cost reduction for SiC MOS controlled devices. A reduction by 20% fabrication costs of SiC IGBT through design and fabrication process optimization is targeted.
Comments: Trials on Kabra process for substrate splitting are planned.
%Achievement: 20%
Objective 4:
Description: Develop an industrial packaging solution that ensures reliable operation at 15kV and demonstrate the full potential of the SiC technology. The packaging must be non-intrusive in terms of electrical performances and parasitic circuit.
Comments: Design and simulation completed. Production and testing will start in the next months
%Achievement: 30%
Objective 5:
Description: Develop SiC IGBT packaged device with breakdown voltage above 15kV and current rating above 25A qualified to TRL5.
Comments: Test and methodology defined.
%Achievement: 30%
Objective 6:
Description: Define an efficient test methodology and related test benches for UHV (>10kV) semiconductor devices and associated power electronic components used with these devices.
Comments: Milestone 1 & 3 completed
%Achievement: 20%
Objective 7:
Description: Set up and demonstrate reliability tests methods for UHV (>10kV) devices and associated power electronic components used with these devices by means of accelerated testing and/or increased stress level.
Comments:
Task 4.1 25% achieved
Task 4.2 15% achieved
Task 4.3 5% achieved
Task 4.4 & 4.5 planned for 2025
Task 4.6 25% achieved
%Achievement: 15%
Objective 8:
Description: Validate performance of the packaged high voltage IGBT devices through integration in the DC/DC converter (Achieves device TRL6). Performance will be compared with MOSFETs series connection solution
Comments: Planned for 2026
%Achievement: 0%
Objective 9:
Description: Develop and validate compact DC/DC converter technology for interface between MVDC and LVDC distribution grids. Achieve 60% reduction in weight and volume compared to equivalent AC 50Hz transformer. (Achieves converter TRL5).
Comments: Conceptual design of the DC/DC converter have been developed and it is expected to achieve required reductions
%Achievement: 20%
Objective 10:
Description: Identify at least 3 use cases for early adoption of the high voltage SiC technology and DC/DC converters.
Comments: 3 Use cases have been proposed based on the initial assumptions developed in the project.
%Achievement: 50%
distribution.
Here there is a summary of the objectives of the project and the grade of achievement in these first months.
Objective 1:
Description: Develop optimal SiC starting material with low defects density, high carrier lifetime and re-usable substrate adapted to 15kV bipolar devices fabrication based on an innovative substrate laser splitting technique.
Comments: Wafers fabricated and delivered however a delay in the laser splitting is foreseen of about 1 year (see text in WP2).
%Achievement: 25%
Objective 2:
Description: Develop optimal active area and innovative termination designs for maximum current/area capability.
Comments: Design and simulation of IGBT active area and termination design is done for the first round. Eperimental trials awaiting for further feedback for further design improvements.
% Achievement: 60%
Objective 3:
Description: Develop a processing technology based on reduced energy and water consumption, and cost reduction for SiC MOS controlled devices. A reduction by 20% fabrication costs of SiC IGBT through design and fabrication process optimization is targeted.
Comments: Trials on Kabra process for substrate splitting are planned.
%Achievement: 20%
Objective 4:
Description: Develop an industrial packaging solution that ensures reliable operation at 15kV and demonstrate the full potential of the SiC technology. The packaging must be non-intrusive in terms of electrical performances and parasitic circuit.
Comments: Design and simulation completed. Production and testing will start in the next months
%Achievement: 30%
Objective 5:
Description: Develop SiC IGBT packaged device with breakdown voltage above 15kV and current rating above 25A qualified to TRL5.
Comments: Test and methodology defined.
%Achievement: 30%
Objective 6:
Description: Define an efficient test methodology and related test benches for UHV (>10kV) semiconductor devices and associated power electronic components used with these devices.
Comments: Milestone 1 & 3 completed
%Achievement: 20%
Objective 7:
Description: Set up and demonstrate reliability tests methods for UHV (>10kV) devices and associated power electronic components used with these devices by means of accelerated testing and/or increased stress level.
Comments:
Task 4.1 25% achieved
Task 4.2 15% achieved
Task 4.3 5% achieved
Task 4.4 & 4.5 planned for 2025
Task 4.6 25% achieved
%Achievement: 15%
Objective 8:
Description: Validate performance of the packaged high voltage IGBT devices through integration in the DC/DC converter (Achieves device TRL6). Performance will be compared with MOSFETs series connection solution
Comments: Planned for 2026
%Achievement: 0%
Objective 9:
Description: Develop and validate compact DC/DC converter technology for interface between MVDC and LVDC distribution grids. Achieve 60% reduction in weight and volume compared to equivalent AC 50Hz transformer. (Achieves converter TRL5).
Comments: Conceptual design of the DC/DC converter have been developed and it is expected to achieve required reductions
%Achievement: 20%
Objective 10:
Description: Identify at least 3 use cases for early adoption of the high voltage SiC technology and DC/DC converters.
Comments: 3 Use cases have been proposed based on the initial assumptions developed in the project.
%Achievement: 50%