The project successfully defined the technical and cost requirements for SiC-based converters in the renewable energy sector, focusing on solar and wind applications. This included technical specifications for both types of converters and solid-state circuit breakers (SSCBs). A techno-economic analysis was completed, comparing the new SiC converters with traditional silicon-based IGBT converters. This allowed the team to outline strategies for cost reduction and set clear targets for improving the Levelized Cost of Energy (LCoE) for large-scale renewable energy systems.
The project made significant advancements in SiC substrate and epitaxial processes. The epitaxial process cycle time was reduced by 25% through increased growth rates, which did not compromise quality. Additionally, the introduction of in-situ etching processes extended reactor maintenance intervals, improving overall efficiency and reducing costs. These process improvements contributed to the development of high-quality SiC-based devices for high-voltage applications.
In the development of high-voltage SiC MOSFETs, the project completed the design and conducted extensive TCAD simulations for 3.3kV and 6.5kV devices. These simulations provided insights into conduction and switching losses, helping optimize the performance of SiC MOSFET devices. As a result, the cost of SiC MOSFET dies was reduced by approximately 20%.
Moreover, a gate driver circuit was developed to enhance the control and efficiency of the MOSFETs, ensuring reliable and precise switching performance in high-voltage applications.
Lastly, significant strides were made in the packaging and thermal management of SiC devices. The design of the Half Bridge Power Module was completed, with all components ready for assembly. Thermal simulations were conducted to optimize the cooling systems, ensuring efficient operation under high power and voltage conditions. This will enable the SiC devices to be integrated into renewable energy systems, contributing to the overall scalability and commercial readiness of the technology.
