Periodic Reporting for period 1 - AdvanSiC (AdvanSiC - Advances in Cost-Effective HV SiC Power Devices for Europe’s Medium Voltage Grids)
Período documentado: 2023-01-01 hasta 2024-06-30
The project successfully defined the technical and cost requirements for SiC-based converters in the renewable energy sector, focusing on solar and wind applications. This included technical specifications for both types of converters and solid-state circuit breakers (SSCBs). A techno-economic analysis was completed, comparing the new SiC converters with traditional silicon-based IGBT converters. This allowed the team to outline strategies for cost reduction and set clear targets for improving the Levelized Cost of Energy (LCoE) for large-scale renewable energy systems.
The project made significant advancements in SiC substrate and epitaxial processes. The epitaxial process cycle time was reduced by 25% through increased growth rates, which did not compromise quality. Additionally, the introduction of in-situ etching processes extended reactor maintenance intervals, improving overall efficiency and reducing costs. These process improvements contributed to the development of high-quality SiC-based devices for high-voltage applications.
In the development of high-voltage SiC MOSFETs, the project completed the design and conducted extensive TCAD simulations for 3.3kV and 6.5kV devices. These simulations provided insights into conduction and switching losses, helping optimize the performance of SiC MOSFET devices. As a result, the cost of SiC MOSFET dies was reduced by approximately 20%.
Moreover, a gate driver circuit was developed to enhance the control and efficiency of the MOSFETs, ensuring reliable and precise switching performance in high-voltage applications.
Lastly, significant strides were made in the packaging and thermal management of SiC devices. The design of the Half Bridge Power Module was completed, with all components ready for assembly. Thermal simulations were conducted to optimize the cooling systems, ensuring efficient operation under high power and voltage conditions. This will enable the SiC devices to be integrated into renewable energy systems, contributing to the overall scalability and commercial readiness of the technology.
The project made significant advancements in SiC substrate and epitaxial processes. The epitaxial process cycle time was reduced by 25% through increased growth rates, which did not compromise quality. Additionally, the introduction of in-situ etching processes extended reactor maintenance intervals, improving overall efficiency and reducing costs. These process improvements contributed to the development of high-quality SiC-based devices for high-voltage applications.
In the development of high-voltage SiC MOSFETs, the project completed the design and conducted extensive TCAD simulations for 3.3kV and 6.5kV devices. These simulations provided insights into conduction and switching losses, helping optimize the performance of SiC MOSFET devices. As a result, the cost of SiC MOSFET dies was reduced by approximately 20%.
Moreover, a gate driver circuit was developed to enhance the control and efficiency of the MOSFETs, ensuring reliable and precise switching performance in high-voltage applications.
Lastly, significant strides were made in the packaging and thermal management of SiC devices. The design of the Half Bridge Power Module was completed, with all components ready for assembly. Thermal simulations were conducted to optimize the cooling systems, ensuring efficient operation under high power and voltage conditions. This will enable the SiC devices to be integrated into renewable energy systems, contributing to the overall scalability and commercial readiness of the technology.
WP1: Project Management and Technical Coordination
· Developed key deliverables such as the Project Management Handbook and the Quality Assurance Plan to ensure smooth project operations.
· Regular bi-weekly meetings and six-monthly general assemblies were held to monitor technical progress.
· A Risk Management Plan (RMP) was implemented to identify, assess, and mitigate risks.
WP2: SiC Technical and Cost-Effectiveness Validation
· Technical requirements for SiC-based converters targeting the renewable energy market were defined.
· Cost and energy efficiency objectives were set for MVDC network converters, and validation tests were planned.
WP3: SiC Substrate and Epitaxial Processes
· Accomplished a 25% reduction in epitaxy process cycle time, improving efficiency.
· In-situ etching tests were initiated to extend reactor maintenance periods and lower costs.
WP4: HV-SiC MOSFET Technology
· Initial design specifications for 3.3kV SiC MOSFET devices were developed.
· TCAD simulations were performed to estimate performance parameters such as conduction and switching losses.
WP5: Packaging of HV SiC Devices
· Pre-development optimization of solid-state circuit breakers (SSCB) and high-current modules was completed.
· Initial designs and simulations for 3.3kV MOSFET modules were done, and assembly of the first Half Bridge Power Module is scheduled.
WP6: SiC Converter Stack and Subsystems Design
·Busbar and capacitor design for wind and solar demonstrators was completed, along with inductance and thermal simulations for these components.
· Frist driver design and prototype for parallel connection.
WP7: Dissemination and Communication
· The consortium identified stakeholders across academia, industry, and the scientific community.
· Dissemination activities included conference presentations, publications, and trade fair participation.
· Developed key deliverables such as the Project Management Handbook and the Quality Assurance Plan to ensure smooth project operations.
· Regular bi-weekly meetings and six-monthly general assemblies were held to monitor technical progress.
· A Risk Management Plan (RMP) was implemented to identify, assess, and mitigate risks.
WP2: SiC Technical and Cost-Effectiveness Validation
· Technical requirements for SiC-based converters targeting the renewable energy market were defined.
· Cost and energy efficiency objectives were set for MVDC network converters, and validation tests were planned.
WP3: SiC Substrate and Epitaxial Processes
· Accomplished a 25% reduction in epitaxy process cycle time, improving efficiency.
· In-situ etching tests were initiated to extend reactor maintenance periods and lower costs.
WP4: HV-SiC MOSFET Technology
· Initial design specifications for 3.3kV SiC MOSFET devices were developed.
· TCAD simulations were performed to estimate performance parameters such as conduction and switching losses.
WP5: Packaging of HV SiC Devices
· Pre-development optimization of solid-state circuit breakers (SSCB) and high-current modules was completed.
· Initial designs and simulations for 3.3kV MOSFET modules were done, and assembly of the first Half Bridge Power Module is scheduled.
WP6: SiC Converter Stack and Subsystems Design
·Busbar and capacitor design for wind and solar demonstrators was completed, along with inductance and thermal simulations for these components.
· Frist driver design and prototype for parallel connection.
WP7: Dissemination and Communication
· The consortium identified stakeholders across academia, industry, and the scientific community.
· Dissemination activities included conference presentations, publications, and trade fair participation.
The project successfully reduced epitaxial process cycle time by 25%, increasing production efficiency for SiC-based devices while reducing overall costs. Additionally, the project completed initial in-situ etching processes to improve reactor maintenance intervals and further enhance manufacturing throughput.
In terms of high-voltage device development, the pre-development optimization for the low- and high-current solid-state circuit breakers (SSCB) and high-voltage MOSFET modules was completed, providing the foundation for further prototyping and testing in subsequent project stages.
Moreover, the project developed a standard and advanced planar SiC MOSFET design and conducted 3D TCAD simulations to predict the performance of both 3.3kV and 6.5kV MOSFET structures. These results allowed for the generation of datasheets that informed the subsequent design and testing of power modules and converters. Testing and simulations demonstrated that the SPW cooling system performed exceptionally well, highlighting its suitability for high-efficiency, low-cost thermal management in power modules.
To support the technology's future implementation, the Half Bridge Power Module design was completed, with all components ready for assembly, and commercial components were already procured for testing. The project has made notable progress in packaging and thermal optimization, ensuring scalability and cost-effective solutions for high-voltage applications in renewable energy and industrial sectors.
In terms of high-voltage device development, the pre-development optimization for the low- and high-current solid-state circuit breakers (SSCB) and high-voltage MOSFET modules was completed, providing the foundation for further prototyping and testing in subsequent project stages.
Moreover, the project developed a standard and advanced planar SiC MOSFET design and conducted 3D TCAD simulations to predict the performance of both 3.3kV and 6.5kV MOSFET structures. These results allowed for the generation of datasheets that informed the subsequent design and testing of power modules and converters. Testing and simulations demonstrated that the SPW cooling system performed exceptionally well, highlighting its suitability for high-efficiency, low-cost thermal management in power modules.
To support the technology's future implementation, the Half Bridge Power Module design was completed, with all components ready for assembly, and commercial components were already procured for testing. The project has made notable progress in packaging and thermal optimization, ensuring scalability and cost-effective solutions for high-voltage applications in renewable energy and industrial sectors.