Project description
Low-power electronics with hybrid Si/IGZO platform
Silicon complementary metal-oxide semiconductor (Si CMOS) chip technologies are versatile and used in a wide range of applications. Funded by the European Research Council, the Orison project will develop a scalable toolbox using a 3D hetero-integration route of Si CMOS and indium gallium zinc oxide (IGZO) n-type transistors targeting ultralow-power circuit design, high-voltage interfacing and low-area 3D stacked hybrid pixel engines. The project will create hybrid cell libraries that will enable ultralow power consumption and facilitate innovations in extremely low off-stage leakage currents. Moreover, the 3D technology platform will offer beyond state-of-the-art circuit and pixel resolutions. Finally, the platform will envision the creation of lifetime battery-powered or battery-less wearable devices and leaf-node Internet of Things applications.
Objective
Silicon complementary metal-oxide semiconductor (Si CMOS) technologies are ubiquitous in a plethora of products today employing a multitude of chips. The current challenges of Si chips research and applications are area, power consumption and high-voltage interposing for AR/VR, low-power IoT, high-voltage sensors and actuator interfaces such as MEMS and lab-on-chip.
ORISON’s goal is to develop a scalable toolbox on top of Si CMOS chip technologies for disruptive research activities in ultralow power circuit design, high-voltage interfacing and low-area 3D stacked hybrid pixel engines. The technology platform focuses on a 3D hetero-integration route of Si CMOS and Indium-Gallium-Zinc-Oxide (IGZO) n-type transistors with a 100x lower electron mobility. The game changing nature of ORISON enables innovation on three major pillars: (1) extreme low off-stage leakage currents due to the wide bandgap semiconductor, leading to ultralow power and long retention electronic circuits, (2) the absence of a bulk for IGZO devices, enabling low footprint and high-voltage devices on top of Si CMOS and (3) a 3D technology platform facilitating beyond state-of-the-art circuit and pixel resolutions.
A new hybrid Si pMOS/IGZO cell library will be pioneered targeting ultra-low power consumption because of comparable sub-threshold slopes of both technologies, low off-state leakage currents and individual tuneable threshold voltages by a local backgate. In addition, true cell-level power gating techniques are envisioned to radically reduce the idle power consumption, paving the way to lifetime battery-powered or battery-less wearables and leaf-node IoT.
The novel high-voltage hybrid library impacts positively MEMS and AR/VR applications with unprecedented footprint and power characteristics and enables technology partitioning for smart pixels. The 3D technology also envisions high-resolution pixel engines with refresh-on-demand capacitor-less pixel engines.
Fields of science (EuroSciVoc)
CORDIS classifies projects with EuroSciVoc, a multilingual taxonomy of fields of science, through a semi-automatic process based on NLP techniques.
CORDIS classifies projects with EuroSciVoc, a multilingual taxonomy of fields of science, through a semi-automatic process based on NLP techniques.
- natural sciencescomputer and information sciencesinternetinternet of things
- engineering and technologyelectrical engineering, electronic engineering, information engineeringelectronic engineeringsensorsoptical sensors
- engineering and technologyother engineering and technologiesmicrotechnologylab on a chip
- natural sciencesphysical scienceselectromagnetism and electronicssemiconductivity
- natural scienceschemical sciencesinorganic chemistrymetalloids
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Keywords
Programme(s)
- HORIZON.1.1 - European Research Council (ERC) Main Programme
Funding Scheme
HORIZON-ERC - HORIZON ERC GrantsHost institution
3000 Leuven
Belgium